NANOTOPOGRAPHY IN SILICON WAFER MANUFACTURING: A LITERATURE REVIEW

被引：0
|
作者：
Qin, Na [1 ]
Pei, Z. J.
Guo, D. M. [1 ]
机构：
[1] Dalian Univ Technol, Sch Mech Engn, Dalian, Liaoning, Peoples R China
来源：
PROCEEDINGS OF THE ASME INTERNATIONAL MANUFACTURING SCIENCE AND ENGINEERING CONFERENCE, VOL 1 | 2009年
关键词：
Machining; Measurement; Nanotopography; Silicon Wafer; Simultaneous Double Side Grinding;
D O I：
暂无
中图分类号：
R318 [生物医学工程];
学科分类号：
0831 ;
摘要：
Nanotopograhphy on unpatterned silicon wafers is becoming a serious issue in IC fabrication, especially with the decreasing critical dimension. However, there are no review papers to summarize the literature on nanotopography in silicon wafer manufacturing. This paper reviews the literature on nanotopography in silicon wafer manufacturing. It first describes the significance and definition of nanotopography. It then presents the methods and principles of nanotopography measurement. It also discusses experimental investigations about the effects of simultaneous double side grinding process on nanotopography.
引用
收藏
页码：721 / 728
页数：8
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