Thermal ionization energy of Si and Mg in AlGaN

被引：124

作者：

Katsuragawa, M ^{[1
]}

Sota, S ^{[1
]}

Komori, M ^{[1
]}

Anbe, C ^{[1
]}

Takeuchi, T ^{[1
]}

Sakai, H ^{[1
]}

Amano, H ^{[1
]}

Akasaki, I ^{[1
]}

机构：

[1] Meijo Univ, Dept Elect & Elect Engn, Tempaku Ku, Nagoya, Aichi 4688502, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 189卷

基金：

日本学术振兴会;

关键词：

AlGaN; Mg-doping; hole concentration; effective mass; hydrogen atom like model; activation energy;

D O I：

10.1016/S0022-0248(98)00345-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Compositional dependence of activation energies of Mg and also Si in AlGaN was obtained by the Hall effect measurements at various temperatures. Activation energies in AlGaN with AIN molar fraction less than 0.4 were characterized both theoretically and experimentally. The experimental result fits quite well for the Si donor with the hydrogen atom like model while that of Mg acceptor deviates downward from the model. In the p-type AlGaN, room temperature hole concentration of 1 x 10(17) cm(-3) was achieved in AlxGa1-xN with x = 0.33. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：528 / 531

页数：4

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