Thermal ionization energy of Si and Mg in AlGaN

被引：124

作者：

Katsuragawa, M ^{[1
]}

Sota, S ^{[1
]}

Komori, M ^{[1
]}

Anbe, C ^{[1
]}

Takeuchi, T ^{[1
]}

Sakai, H ^{[1
]}

Amano, H ^{[1
]}

Akasaki, I ^{[1
]}

机构：

[1] Meijo Univ, Dept Elect & Elect Engn, Tempaku Ku, Nagoya, Aichi 4688502, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 189卷

基金：

日本学术振兴会;

关键词：

AlGaN; Mg-doping; hole concentration; effective mass; hydrogen atom like model; activation energy;

D O I：

10.1016/S0022-0248(98)00345-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Compositional dependence of activation energies of Mg and also Si in AlGaN was obtained by the Hall effect measurements at various temperatures. Activation energies in AlGaN with AIN molar fraction less than 0.4 were characterized both theoretically and experimentally. The experimental result fits quite well for the Si donor with the hydrogen atom like model while that of Mg acceptor deviates downward from the model. In the p-type AlGaN, room temperature hole concentration of 1 x 10(17) cm(-3) was achieved in AlxGa1-xN with x = 0.33. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：528 / 531

页数：4

共 12 条

[1] Shortest wavelength semiconductor laser diode
Akasaki, I
Sota, S
Sakai, H
Tanaka, T
Koike, M
Amano, H
[J]. ELECTRONICS LETTERS, 1996, 32 (12) : 1105 - 1106
[2] P-TYPE CONDUCTION IN MG-DOPED GAN TREATED WITH LOW-ENERGY ELECTRON-BEAM IRRADIATION (LEEBI)
AMANO, H
KITO, M
HIRAMATSU, K
AKASAKI, I
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (12): : L2112 - L2114
[3] METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF A HIGH-QUALITY GAN FILM USING AN AIN BUFFER LAYER
AMANO, H
SAWAKI, N
AKASAKI, I
TOYODA, Y
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (05) : 353 - 355
[4] BLUMAN GE, 1997, DEV RES C
[5] Room temperature pulsed operation of nitride based multi-quantum-well laser diodes with cleaved facets on conventional C-face sapphire substrates
Itaya, K
Onomura, M
Nishio, J
Sugiura, L
Saito, S
Suzuki, M
Rennie, J
Nunoue, SY
Yamamoto, M
Fujimoto, H
Kokubun, Y
Ohba, Y
Hatakoshi, G
Ishikawa, M
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1996, 35 (10B): : L1315 - L1317
[6] ENERGY BAND-GAP BOWING PARAMETER IN AN ALXGA1-XN ALLOY
KOIDE, Y
ITOH, H
KHAN, MRH
HIRAMATU, K
SAWAKI, N
AKASAKI, I
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (09) : 4540 - 4543
[7] AlxGa1-xN based materials and heterostructures
Kung, P
Saxler, A
Walker, D
Zhang, X
Lavado, R
Kim, KS
Razeghi, M
[J]. III-V NITRIDES, 1997, 449 : 79 - 84
[8] GROWTH OF SI-DOPED ALXGA1-XN ON (0001) SAPPHIRE SUBSTRATE BY METALORGANIC VAPOR-PHASE EPITAXY
MURAKAMI, H
ASAHI, T
AMANO, H
HIRAMATSU, K
SAWAKI, N
AKASAKI, I
[J]. JOURNAL OF CRYSTAL GROWTH, 1991, 115 (1-4) : 648 - 651
[9] NAKAMURA S, 1996, JPN J APPL PHYS PT 1, V35, P74
[10] Strain effect on electronic and optical properties of GaN/AlGaN quantum-well lasers
Suzuki, M
Uenoyama, T
[J]. JOURNAL OF APPLIED PHYSICS, 1996, 80 (12) : 6868 - 6874

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