Improved interfacial properties of SiO2 grown on 6H-SiC in diluted NO

被引：4
|
作者：
Lai, PT
Xu, JP
Li, CX
Chan, CL
机构：
[1] Univ Hong Kong, Dept Elect & Elect Engn, Hong Kong, Hong Kong, Peoples R China
[2] Huazhong Univ Sci & Technol, Dept Elect Sci & Technol, Wuhan 430074, Peoples R China
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2005年 / 81卷 / 01期
关键词：
D O I：
10.1007/s00339-004-2940-3
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The interface quality and reliability of gate oxides grown on n-/p-type 6H-SiC in diluted NO gas at 1150 degrees C are investigated. As compared to conventional 100%-NO oxidation, the diluted-NO (50% and 23%) oxidations lead to lower interface-state, border-trap and oxide-charge densities. This is attributed to the fact that carbon-accumulation and carbon-removal rates are closer when oxidation is performed in diluted NO, giving a smoother, less disordered and strained interface. Moreover, less degradation of the diluted-NO samples than 100%-NO samples is observed during high-field stressing ( +/-7 MV/cm), indicating that stronger Si = N bonds are created near/at the SiC/SiO2 interface for oxide grown in diluted NO ambient.
引用
收藏
页码：159 / 161
页数：3
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