First-principles study of optical and electronic properties of N-doped SnO2

被引:14
作者
Yu Feng [1 ]
Wang Pei-Ji [1 ]
Zhang Chang-Wen [1 ]
机构
[1] Univ Jinan, Sch Sci, Jinan 250022, Peoples R China
基金
中国国家自然科学基金;
关键词
electronic structure; density of states; optical properties; dielectric function; THIN-FILMS; METAL; TIO2;
D O I
10.7498/aps.59.7285
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Using first-principles full potential linearized augmented plane wave method (FP-LAPW), we present the isosurface of spin density, total density of states and optical properties of undoped SnO2, substitutional N for O and substitutional N for Sn in SnO2. The results show that the band gap in two kinds of N-doped SnO2 is wider than that of SnO2 eigenstate, and the imaginary part of the dielectric function makes a blue shift corresponding to the increasing band gaps. It points out the relationship between electronic structure and optical properties in theory.
引用
收藏
页码:7285 / 7290
页数:6
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