Domain wall nucleation and propagation in spin-transfer torque switching with thermal effects

被引:3
作者
Chen, Bingjin [1 ]
Zhou, Tiejun [2 ]
Sim, Siang Yee [1 ,3 ]
Ter Lim, Sze [1 ]
Gong, Hao [3 ]
机构
[1] ASTAR, Inst Mat Res & Engn, 2 Fusionopolis Way,08-03 Innovis, Singapore 138634, Singapore
[2] Hangzhou Dianzi Univ, Coll Elect & Informat, Ctr Integrated Spintron Devices, Hangzhou 310018, Zhejiang, Peoples R China
[3] Natl Univ Singapore, Dept Mat Sci & Engn, 21 Lower Kent Ridge Rd, Singapore 119077, Singapore
关键词
Spin transfer torque switching; Domain wall nucleation and propagation; Switching times; Micro-magnetics; Thermal fluctuation; MODEL;
D O I
10.1016/j.physleta.2018.09.041
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We conduct micro-magnetic simulations to study spin-transfer torque induced magnetization switching in perpendicular magnetic tunneling junctions. The effects of current densities and temperatures on the switching processes are studied in details. We then proposed an approach to compute the deterministic switching time by taking thermal-effect into account. The switching time is less temperature-dependent under higher current density; however, as the current density decreases, the effect of temperature on the switching time becomes more and more significant. The switching process with micro-magnetic simulations is shown to be via domain wall nucleation and propagation. The phenomena are consistent with the recent experimental found-out. We further propose a method to compute the switching time based on domain wall nucleation and propagation theory, and compare the switching time with those from macro-spin approximation. It is found the switching times from the micro-magnetic simulations are much shorter than that from the macro-spin approximations. Macro-spin approximation over-estimates the switching times due to its coherent rotation assumptions. (C) 2018 Elsevier B.V. All rights reserved.
引用
收藏
页码:3429 / 3434
页数:6
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