The current-voltage characteristics of V2O5/n-Si Schottky diodes formed with different metals

被引：11
作者：
Kaya, Meltem Donmez [1 ]
Sertel, Buse Comert [1 ]
Sonmez, Nihan Akin [1 ,2 ]
Cakmak, Mehmet [1 ,2 ]
Ozcelik, Suleyman [1 ,2 ]
机构：
[1] Gazi Univ, Photon Applicat & Res Ctr, TR-06500 Ankara, Turkey
[2] Gazi Univ, Dept Photon, TR-06500 Ankara, Turkey
来源：
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2021年 / 32卷 / 15期
关键词：
V2O5; THIN-FILMS; GAS-SENSING PROPERTIES; ELECTRICAL-PROPERTIES; VANADIUM-OXIDE; ELECTROCHEMICAL PROPERTIES; OPTICAL-PROPERTIES; BARRIER DIODES; TEMPERATURE; THICKNESS; NANORODS;
D O I：
10.1007/s10854-021-06534-w
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this work, we reported the effect of different metal contacts on performance of metal-oxide-semiconductor (MOS)-structured Schottky diodes formed with the vanadium pentoxide thin film (V2O5) interfacial layer. V2O5 thin films were deposited by radio frequency (RF) magnetron sputtering on n-type silicon (n-Si) and Corning glass (CG) substrates at room temperature. Then, the obtained films were annealed at 300 degrees C and 500 degrees C. The effects of annealing temperature on physical properties of the films were investigated by X-ray photoelectron spectroscopy, secondary ion mass spectroscopy, atomic force microscopy, UV-Vis spectroscopy, and photoluminescence. The MOS-structured Al/V2O5/n-Si, Ti/V2O5/n-Si and Au/V2O5/n-Si Schottky barrier diodes (SBDs) performance was analyzed with I-V measurements at room temperature. The Schottky diodes were compared with each other according to three methods (Classic, Norde and Cheung). The experimental results indicated that the Schottky diode produced with Al contact had better performance than the others.
引用
收藏
页码：20284 / 20294
页数：11
相关论文
共 67 条
[41]   Local grain-to-grain conductivity in an SnO2-V2O5nanocomposite ethanol sensor [J].
Muthukumaravel, Chitra ;
Karunakaran, Uthayarani ;
Mangamma, Geramilla .
NANOTECHNOLOGY, 2020, 31 (34)
[42]   Exploration of organic additives-assisted vanadium pentoxide (V2O5) nanoparticles for Cu/n-V2O5/p-Si Schottky diode applications [J].
Paul, C. Arun ;
Shree, B. Sharanya ;
Preethi, T. ;
Chandrasekaran, J. ;
Mohanraj, K. ;
Senthil, K. .
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2019, 30 (24) :20989-20996
[43]   Structural, optical and electrical properties of pure and Fe doped V2O5 nanoparticles for junction diode fabrications [J].
Pradeep, I. ;
Kumar, E. Ranjith ;
Suriyanaranan, N. ;
Srinivas, Ch. ;
Rao, N. Venkata .
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2018, 29 (12) :9840-9853
[44]   Effects of doping concentration on structural, morphological, optical and electrical properties of tungsten doped V2O5 nanorods [J].
Pradeep, I. ;
Kumar, E. Ranjith ;
Suriyanarayanan, N. ;
Srinivas, Ch. ;
Mehar, M. V. K. .
CERAMICS INTERNATIONAL, 2018, 44 (06) :7098-7109
[45]   Structural, morphological and electrochemical properties of nanocrystalline V2O5 thin films deposited by means of radiofrequency magnetron sputtering [J].
Quinzeni, I. ;
Ferrari, S. ;
Quartarone, E. ;
Mustarelli, P. .
JOURNAL OF POWER SOURCES, 2011, 196 (23) :10228-10233
[46]  
Rachel MD., 2016, ANNEALING EFFECTS V2, V7, P547
[47]   Synthesis and gas sensors behavior of surfactants free V2O5 nanostructure by using a simple precipitation method [J].
Raj, A. Dhayal ;
Kumar, P. Suresh ;
Yang, Q. ;
Mangalaraj, D. .
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2012, 44 (7-8) :1490-1494
[48]   Thermal annealing effects on structural, optical and electrical properties of V2O5 nanorods for photodiode application [J].
Raman, M. Sethu ;
Kumar, N. Senthil ;
Chandrasekaran, J. ;
Priya, R. ;
Baraneedharan, P. ;
Chavali, Murthy .
OPTIK, 2018, 157 :410-420
[49]   Physical investigations on electron-beam evaporated vanadium pentoxide films [J].
Ramana, CV ;
Hussain, OM ;
Naidu, BS ;
Julien, C ;
Balkanski, M .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1998, 52 (01) :32-39
[50]   Low-temperature growth of vanadium pentoxide thin films produced by pulsed laser ablation [J].
Ramana, CV ;
Naidu, BS ;
Hussain, OM ;
Pinto, R .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2001, 34 (07) :L35-L38
1234567