Al-, Ga-, and In-doped ZnO thin films via aerosol assisted CVD for use as transparent conducting oxides

被引：44

作者：

Potter, Dominic B. ^{[1
]}

Bhachu, Davinder S. ^{[1
]}

Powell, Michael J. ^{[1
]}

Darr, Jawwad A. ^{[1
]}

Parkin, Ivan P. ^{[1
]}

Carmalt, Claire J. ^{[1
]}

机构：

[1] UCL, Mat Chem Ctr, Dept Chem, London WC1H 0AJ, England

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2016年 / 213卷 / 05期

基金：

英国工程与自然科学研究理事会;

关键词：

aerosol assisted; chemical vapor deposition; doping; transparent conducting oxides; zinc oxide; CHEMICAL-VAPOR-DEPOSITION; SOLAR-ENERGY MATERIALS; STRUCTURAL-PROPERTIES; OPTICAL-PROPERTIES; RESISTIVITY;

D O I：

10.1002/pssa.201532996

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Al-, Ga-, and In-doped ZnO thin films were deposited on glass substrates by aerosol assisted chemical vapour deposition (AACVD) at a deposition temperature of 450 degrees C. The air-stable compound zinc acetylacetonate [Zn(acac)(2)] was used as a Zn source, whilst for the dopants of Al, Ga and In, the corresponding trichloride was used. Methanol solutions of the metal salts were used as precursor solutions and N-2 carrier gas was used for the aerosol. Films were grown in approximately 30 min and were synthesised using dopant values of 5, 10, 15 and 20 mol.% (with respect to the Zn) in the precursor solution. XRD analysis showed that the films were wurtzite ZnO. XPS analysis confirmed the presence of the dopants in the films. Several of the films showed high transparency (>80%) in the visible range, and low resistivity (similar to 10(-3) Omega cm). (C) 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：1346 / 1352

页数：7

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