Photoluminescence Characterization of Hydrogenated Nanocrystalline/Amorphous Silicon

被引：1
|
作者：
Fields, J. D. [1 ]
Taylor, P. C. [2 ]
Radziszewski, J. G. [2 ]
Baker, D. A. [2 ]
Yue, G.
Yan, B.
机构：
[1] Colorado Sch Mines, Dept Mat Sci, Golden, CO 80401 USA
[2] Colorado Sch Mines, Dept Phys Sci, Golden, CO 80401 USA
来源：
AMORPHOUS AND POLYCRYSTALLINE THIN FILM SILICON SCIENCE AND TECHNOLOGY - 2009, VOL 1153 | 2009年 / 1153卷
关键词：
TEMPERATURE;
D O I：
10.1557/PROC-1153-A02-01
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The photoluminescence in a nc-Si/a-Si:H mixture has been investigated at varying excitation intensities, and temperatures We have also observed changes in the luminescence spectra, which are induced by sequential annealing at temperatures below the a-Si: H crystallization temperature (similar to 600 degrees C). Two predominant luminescence peaks are observed at similar to 0.95 eV and similar to 1.30 eV, which are attributed to band tail-to-band tail transitions near the nc-Si grain boundaries and in the a-Si: H bulk, respectively. The 0.95 eV band saturates approaching 500 mW/cm(2) excitation intensity. Annealing the nc-Si/a-Si: H mixture brings out a new low energy peak, centered at similar to 0.70 eV, and which we believe to be due to oxygen defects.
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页数：6
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