Performance enhancement of AlGaN-based 365 nm ultraviolet light-emitting diodes with a band-engineering last quantum barrier

被引：28
作者：
He, Longfei [1 ,2 ]
Zhao, Wei [2 ]
Zhang, Kang [2 ]
He, Chenguang [2 ]
Wu, Hualong [2 ]
Liu, Ningyang [2 ]
Song, Weidong [1 ]
Chen, Zhitao [2 ]
Li, Shuti [1 ]
机构：
[1] South China Normal Univ, Inst Optoelect Mat & Technol, Guangdong Engn Res Ctr Optoelect Funct Mat & Devi, Guangzhou 510631, Guangdong, Peoples R China
[2] Guangdong Acad Sci, Guangdong Inst Semicond Ind Technol, Guangzhou 510650, Guangdong, Peoples R China
来源：
OPTICS LETTERS | 2018年 / 43卷 / 03期
基金：
中国国家自然科学基金;
关键词：
ADVANTAGES; LEDS;
D O I：
10.1364/OL.43.000515
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
In this Letter, the characteristics of the AlGaN-based nearultraviolet light-emitting diodes with a band-engineering last quantum barrier (LQB) were analyzed experimentally and numerically. The experimental results show that the peak wavelengths of UV-LEDs are around 368 nmwith a full width at half-maximum of 12 -14 nm, and the optical and electrical properties are improved by using an AlxGa1-xN LQB with a gradually decreasing Al content. The designed LQB can reduce the forward voltage from 4.35 to 4.29 V and markedly enhance LOP by 47.4% at an injection current of 200 mA, compared with the original structure. These improvements are mainly attributed to less electron leakage and higher hole injection efficiency, resulting from the weakened polarization field in the electron-blocking layer (EBL) and LQB, as well as the alleviation of the band bending at the EBL/LQB interface. (C) 2018 Optical Society of America
引用
收藏
页码：515 / 518
页数：4
相关论文
共 50 条
[31]   Effects of the number of quantum wells on the performance of near-ultraviolet light-emitting diodes [J].
Choi, Hyo-Shik ;
Zheng, Dong-Guang ;
Kim, Hyunsung ;
Shim, Jong-In ;
Shin, Dong-Soo .
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2015, 66 (10) :1554-1558
[32]   Enhancing the light extraction of AlGaN-based vertical type deep-ultraviolet light-emitting-diodes with an internal reflector [J].
Sung, Youn Joon ;
Lee, Young-Gyeong ;
Kim, Hwankyo ;
Lim, Hyun-Soo ;
Kwon, O-Min ;
Choi, Sunghan ;
Moon, Yong-Tae ;
Choi, Rak-Jun ;
Jung, Myung-Hoon ;
Oh, Jeong-Tak ;
Kim, Dong Woo ;
Yeom, Geun Young .
APPLIED PHYSICS EXPRESS, 2019, 12 (12)
[33]   Step multiple quantum well enabled performance enhancement in InGaN/GaN based light-emitting diodes [J].
Karan, Himanshu ;
Saha, Mainak ;
Biswas, Abhijit .
MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS, 2020, 26 (10) :3055-3062
[34]   Improved carrier injection of AlGaN-based deep ultraviolet light emitting diodes with graded superlattice electron blocking layers [J].
So, Byeongchan ;
Kim, Jinwan ;
Kwak, Taemyung ;
Kim, Taeyoung ;
Lee, Joohyoung ;
Choi, Uiho ;
Nam, Okhyun .
RSC ADVANCES, 2018, 8 (62) :35528-35533
[35]   Very Low-Efficiency Droop in 293 nm AlGaN-Based Light-Emitting Diodes Featuring a Subtly Designed p-Type Layer [J].
Lai, Mu-Jen ;
Chang, Yi-Tsung ;
Wang, Shu-Chang ;
Huang, Shiang-Fu ;
Liu, Rui-Sen ;
Zhang, Xiong ;
Chen, Lung-Chien ;
Lin, Ray-Ming .
MOLECULES, 2022, 27 (21)
[36]   Efficiency improvements in AlGaN-based deep ultraviolet light-emitting diodes using inverted-V-shaped graded Al composition electron blocking layer [J].
Fan, Xuancong ;
Sun, Huiqing ;
Li, Xuna ;
Sun, Hao ;
Zhang, Cheng ;
Zhang, Zhuding ;
Guo, Zhiyou .
SUPERLATTICES AND MICROSTRUCTURES, 2015, 88 :467-473
[37]   Enhanced wall-plug efficiency in AlGaN-based deep-ultraviolet light-emitting diodes with uniform current spreading p-electrode structures [J].
Hao, Guo-Dong ;
Taniguchi, Manabu ;
Tamari, Naoki ;
Inoue, Shin-ichiro .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2016, 49 (23)
[38]   Optical Performance Enhancement of Quantum Dot-Based Light-Emitting Diodes Through an Optimized Remote Structure [J].
Lei, Xiang ;
Zheng, Huai ;
Guo, Xing ;
Chu, Jingcao ;
Liu, Sheng ;
Liu, Peizhao .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2016, 63 (02) :691-697
[39]   Numerical study on the optimisation of AlGaN-based deep ultra-violet light emitting diodes single quantum wells [J].
Mazwan, M. ;
Ng, S. S. ;
Syamsul, M. ;
Shuhaimi, A. ;
Pakhuruddin, M. Z. ;
Rahim, A. F. A. .
INTERNATIONAL JOURNAL OF NANOTECHNOLOGY, 2024, 21 (4-5) :353-368
[40]   Hybrid indium tin oxide/Ag nanowire electrodes for improving the light output power of near ultraviolet AlGaN-based light-emitting diode [J].
Park, Jae-Seong ;
Kim, Jae-Ho ;
Kim, Jun-Yong ;
Kim, Dae-Hyun ;
Kang, Daesung ;
Sung, Jun-Suk ;
Seong, Tae-Yeon .
CURRENT APPLIED PHYSICS, 2016, 16 (05) :545-548
12345