Performance enhancement of AlGaN-based 365 nm ultraviolet light-emitting diodes with a band-engineering last quantum barrier

被引：27
|
作者：
He, Longfei [1 ,2 ]
Zhao, Wei [2 ]
Zhang, Kang [2 ]
He, Chenguang [2 ]
Wu, Hualong [2 ]
Liu, Ningyang [2 ]
Song, Weidong [1 ]
Chen, Zhitao [2 ]
Li, Shuti [1 ]
机构：
[1] South China Normal Univ, Inst Optoelect Mat & Technol, Guangdong Engn Res Ctr Optoelect Funct Mat & Devi, Guangzhou 510631, Guangdong, Peoples R China
[2] Guangdong Acad Sci, Guangdong Inst Semicond Ind Technol, Guangzhou 510650, Guangdong, Peoples R China
来源：
OPTICS LETTERS | 2018年 / 43卷 / 03期
基金：
中国国家自然科学基金;
关键词：
ADVANTAGES; LEDS;
D O I：
10.1364/OL.43.000515
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
In this Letter, the characteristics of the AlGaN-based nearultraviolet light-emitting diodes with a band-engineering last quantum barrier (LQB) were analyzed experimentally and numerically. The experimental results show that the peak wavelengths of UV-LEDs are around 368 nmwith a full width at half-maximum of 12 -14 nm, and the optical and electrical properties are improved by using an AlxGa1-xN LQB with a gradually decreasing Al content. The designed LQB can reduce the forward voltage from 4.35 to 4.29 V and markedly enhance LOP by 47.4% at an injection current of 200 mA, compared with the original structure. These improvements are mainly attributed to less electron leakage and higher hole injection efficiency, resulting from the weakened polarization field in the electron-blocking layer (EBL) and LQB, as well as the alleviation of the band bending at the EBL/LQB interface. (C) 2018 Optical Society of America
引用
收藏
页码：515 / 518
页数：4
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