Directional neurite outgrowth is enhanced by engineered meningeal cell-coated substrates

被引:30
作者
Walsh, JF [1 ]
Manwaring, ME [1 ]
Tresco, PA [1 ]
机构
[1] Univ Utah, Dept Bioengn, Keck Ctr Tussue Engn, Salt Lake City, UT 84112 USA
来源
TISSUE ENGINEERING | 2005年 / 11卷 / 7-8期
关键词
D O I
10.1089/ten.2005.11.1085
中图分类号
Q813 [细胞工程];
学科分类号
摘要
After injury to the CNS, the anatomical organization of the tissue is disrupted, posing a barrier to the regeneration of axons. Meningeal cells, a central participant in the CNS tissue response to injury, migrate into the core of the wound site in an unorganized fashion and deposit a disorganized extracellular matrix ( ECM) that produces a nonpermissive environment. Previous work in our laboratory has shown that the presentation of nanometer- scale topographic cues to these cells influences their morphological, cytoskeletal, and secreted ECM alignment. In the present study, we provided similar environmental cues to meningeal cells and examined the ability of the composite construct to influence dorsal root ganglion regeneration in vitro. When grown on control surfaces of meningeal cells lacking underlying topographic cues, there was no bias in neurite outgrowth. In contrast, when grown on monolayers of meningeal cells with underlying nanometer- scale topography, neurite outgrowth length was greater and was directed parallel to the underlying surface topography even though there exists an intervening meningeal cell layer. The observed outgrowth was significantly longer than on laminin- coated surfaces, which are considered to be the optimal substrata for promoting outgrowth of dorsal root ganglion neurons in culture. These results suggest that the nanometer- level surface finish of an implanted biomaterial may be used to organize the encapsulation tissue that accompanies the implantation of materials into the CNS. It furthermore suggests a simple approach for improving bridging materials for repair of nerve tracts or for affecting cellular organization at a device - tissue interface.
引用
收藏
页码:1085 / 1094
页数:10
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