Evidence for compliance controlled oxygen vacancy and metal filament based resistive switching mechanisms in RRAM

被引：51

作者：

Raghavan, Nagarajan ^{[1
]}

Pey, Kin Leong ^{[1
,2
]}

Liu, Wenhu ^{[1
]}

Wu, Xing ^{[1
]}

Li, Xiang ^{[3
]}

Bosman, Michel ^{[4
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

[2] SUTD, Singapore 279623, Singapore

[3] A STAR Inst Microelect IME, Singapore 117685, Singapore

[4] A STAR Inst Mat Res & Engn Inst Mat Res & Engn, Singapore 117602, Singapore

来源：

MICROELECTRONIC ENGINEERING | 2011年 / 88卷 / 07期

关键词：

Bipolar switching; Metal filament; Oxygen vacancy; Resistive random access memory (RRAM); Unipolar switching;

D O I：

10.1016/j.mee.2011.03.027

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present electrical evidence on asymmetric metal-insulator-semiconductor (MIS) based test structures in support of the presence of two different independent switching mechanisms in a resistive random access memory (RRAM) device. The valid mechanism for switching depends on the compliance capping (I-gl) for forming/SET transition. Our results convincingly show that low compliance based switching only involves reversible oxygen ion drift to and from oxygen gettering gate electrodes, while high compliance switching involves formation and rupture of conductive metallic nanofilaments, as verified further by our physical analysis investigations. We have observed this unique dual mode switching mechanism only in NiSi-based gate electrodes, which have a moderate oxygen solubility as well as relatively low melting point. (c) 2011 Elsevier B.V. All rights reserved.

引用

页码：1124 / 1128

页数：5

共 12 条

[1]

Bersuker G, 2010, INT EL DEVICES MEET

[2]

Degraeve R., 2001, IEEE Transactions on Device and Materials Reliability, V1, P163, DOI 10.1109/7298.974832

[3] Model for the current-voltage characteristics of ultrathin gate oxides after soft breakdown [J].

Houssa, M ;

Nigam, T ;

Mertens, PW ;

Heyns, MM .

JOURNAL OF APPLIED PHYSICS, 1998, 84 (08) :4351-4355

[4]

Kwon DH, 2010, NAT NANOTECHNOL, V5, P148, DOI [10.1038/NNANO.2009.456, 10.1038/nnano.2009.456]

[5] Large 1/f noise of unipolar resistance switching and its percolating nature [J].

Lee, S. B. ;

Park, S. ;

Lee, J. S. ;

Chae, S. C. ;

Chang, S. H. ;

Jung, M. H. ;

Jo, Y. ;

Kahng, B. ;

Kang, B. S. ;

Lee, M. -J. ;

Noh, T. W. .

APPLIED PHYSICS LETTERS, 2009, 95 (12)

[6] Resistive switching in NiSi gate metal-oxide-semiconductor transistors [J].

Li, X. ;

Liu, W. H. ;

Raghavan, N. ;

Bosman, M. ;

Pey, K. L. .

APPLIED PHYSICS LETTERS, 2010, 97 (20)

[7] The physical origin of random telegraph noise after dielectric breakdown [J].

Li, X. ;

Tung, C. H. ;

Pey, K. L. ;

Lo, V. L. .

APPLIED PHYSICS LETTERS, 2009, 94 (13)

[8]

PEY KL, 2007, INT J NANOTECHNOLOGY, V4

[9] Oxygen-Soluble Gate Electrodes for Prolonged High-κ Gate-Stack Reliability [J].

Raghavan, Nagarajan ;

Pey, Kin Leong ;

Wu, Xing ;

Liu, Wenhu ;

Li, Xiang ;

Bosman, Michel ;

Kauerauf, Thomas .

IEEE ELECTRON DEVICE LETTERS, 2011, 32 (03) :252-254

[10] High κ for MIM and RRAM applications: Impact of the metallic electrode and oxygen vacancies [J].

Vallee, C. ;

Gonon, P. ;

Jorel, C. ;

El Kamel, F. ;

Mougenot, M. ;

Jousseaume, V. .

MICROELECTRONIC ENGINEERING, 2009, 86 (7-9) :1774-1776

← 1 2 →