Large area GaN and AlN template substrates fabricated by HVPE

Hydride vapour phase epitaxy (HVPE) is known as fast deposition method to produce both free-standing GaN substrate materials and thick low-defect GaN on 2-inch sapphire and AlN layers on 2-inch sapphire and conductive silicon carbide (SiC) substrates. These substrate materials of 2-inch size are available as commercial product. In this paper, we extend the HVPE abilities to new fields including up to 23 mu m thick crack-free AlN layers growth on 3-inch and 100-mm SiC substrates (AlN/SiC template substrates) and up to 125 mu m thick GaN layers grown on 3-inch sapphire (GaN/sapphire template substrates). For 21-23 mu m thick AlN layers grown on 100-mm SiC substrates, the X-ray rocking curve FWHM was ranged from 200 to 300 arc sec and from 600 to 800 arc sec for the (00.2) and the (10.2) AlN reflections, respectively. For 115-125 mu m thick GaN layers, the X-ray FWHM values were 120-150 arcsec and 200-230arc sec for the (00.2) and the (10.2) GaN reflections, respectively, that corresponds screw dislocation density of (3-5)x10(7) cm(-2) evaluated based on XRD data. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim