Optical properties of Al-doped ZnO thin films by ellipsometry

被引：143

作者：

Li, Qing Hua ^{[1
,2
]}

Zhu, Deliang ^{[1
,2
]}

Liu, Wenjun ^{[1
,2
]}

Liu, Yi ^{[3
]}

Ma, Xiao Cui ^{[1
,2
]}

机构：

[1] Shenzhen Univ, Coll Mat Sci & Engn, Shenzhen 518060, Peoples R China

[2] Shenzhen Key Lab Special Funct Mat, Shenzhen 518060, Peoples R China

[3] Shenzhen Univ, Coll Phys, Shenzhen 518060, Peoples R China

来源：

APPLIED SURFACE SCIENCE | 2008年 / 254卷 / 10期

关键词：

Al-doped ZnO (AZO); optical properties; ellipsometry;

D O I：

10.1016/j.apsusc.2007.09.104

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Al-doped ZnO thin films (AZO) were prepared on Si (100) substrates by using sub-molecule doping technique. The Al content was controlled by varying Al sputtering time. The as-prepared samples were annealed in vacuum chamber at 800 degrees C for 30 min. From the XRD observations, it is found that all films exhibit only the (002) peak, suggesting that they have c-axis preferred orientation. The average transmittance of the visible light is above 80%. Spectroscopic ellipsometry was used to extract the optical constants of the films. The absorption coefficient and the energy gap were then calculated. The results show that the absorption edge initially blue-shifts and then red-shifts with increase of Al content. (C) 2008 Published by Elsevier B.V.

引用

页码：2922 / 2926

页数：5

共 28 条

[1] Infrared dielectric functions and crystal orientation of a-plane ZnO thin films on r-plane sapphire determined by generalized ellipsometry [J].

Bundesmann, C ;

Ashkenov, N ;

Schubert, M ;

Rahm, A ;

Wenckstern, HV ;

Kaidashev, EM ;

Lorenz, M ;

Grundmann, M .

THIN SOLID FILMS, 2004, 455 :161-166

[2] Surface characterization of transparent conductive oxide Al-doped ZnO films [J].

Chen, M ;

Pei, ZL ;

Sun, C ;

Wen, LS ;

Wang, X .

JOURNAL OF CRYSTAL GROWTH, 2000, 220 (03) :254-262

[3] Simultaneous determination of the optical properties and of the structure of r.f.-sputtered ZnO thin films [J].

Dumont, E ;

Dugnoille, B ;

Bienfait, S .

THIN SOLID FILMS, 1999, 353 (1-2) :93-99

[4] Determination of optical constants of Si/ZnO polycrystalline nanocomposites by spectroscopic ellipsometry [J].

García-Serrano, J ;

Koshizaki, N ;

Sasaki, T ;

Martínez-Montes, G ;

Pal, U .

JOURNAL OF MATERIALS RESEARCH, 2001, 16 (12) :3554-3559

[5] High conductivity and transparent ZnO:Al films prepared at low temperature by DC and MF magnetron sputtering [J].

Guillen, C. ;

Herrero, J. .

THIN SOLID FILMS, 2006, 515 (02) :640-643

[6] Studies on ZnO:Al thin films deposited by in-line reactive mid-frequency magnetron sputtering [J].

Hong, RJ ;

Jiang, X ;

Szyszka, B ;

Sittinger, V ;

Pflug, A .

APPLIED SURFACE SCIENCE, 2003, 207 (1-4) :341-350

[7] TEXTURED ALUMINUM-DOPED ZINC-OXIDE THIN-FILMS FROM ATMOSPHERIC-PRESSURE CHEMICAL-VAPOR DEPOSITION [J].

HU, JH ;

GORDON, RG .

JOURNAL OF APPLIED PHYSICS, 1992, 71 (02) :880-890

[8] Influence of substrate temperature on the optical and piezoelectric properties of ZnO thin films deposited by rf magnetron sputtering [J].

Kang, Seong Jun ;

Joung, Yang Hee .

APPLIED SURFACE SCIENCE, 2007, 253 (17) :7330-7335

[9] Electrical and optical properties of Al-doped ZnO thin films by sol-gel process [J].

Kim, Young-Sung ;

Tai, Weon-Pil .

APPLIED SURFACE SCIENCE, 2007, 253 (11) :4911-4916

[10] Effects of substrate temperature on the properties of heavily Al-doped ZnO films by simultaneous r.f. and d.c. magnetron sputtering [J].

Lin, SS ;

Huang, JL ;

Sajgalik, P .

SURFACE & COATINGS TECHNOLOGY, 2005, 190 (01) :39-47

← 1 2 3 →