MBE growth of low threshold GaSb-based lasers with emission wavelengths in the range of 2.5-2.7 μm

被引：6

作者：

Vizbaras, Kristijonas ^{[1
]}

Bachmann, Alexander ^{[1
]}

Arafin, Shamsul ^{[1
]}

Sailer, Kai ^{[1
]}

Sprengel, Stefan ^{[1
]}

Boehm, Gerhard ^{[1
]}

Meyer, Ralf ^{[1
]}

Amann, Markus-Christian ^{[1
]}

机构：

[1] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 2011年 / 323卷 / 01期

关键词：

Molecular beam epitaxy; Antimonides; Semiconducting quaternary alloys; Infrared devices; Laser diodes; MOLECULAR-BEAM EPITAXY; ALLOYS; LAYERS;

D O I：

10.1016/j.jcrysgro.2010.11.139

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

In this work, we present our approach towards the growth of active regions and cladding layers for GaSb based record low-threshold lasers emitting in the range of 2.5-2.7 mu m. First, a study on Sb incorporation in the AlGaAsSb cladding layers and GalnAsSb QWs is presented as a function of growth temperature. A linear decrease in Sb incorporation was observed for both cases. Second, a choice of well-barrier material is presented. Here, the best results have been achieved with a GaSb/GalnAsSb combination, yielding a low-temperature (20 K) photoluminescence (PL) response with a very narrow full-width at half-maximum (FWHM) of 4.5 meV. The latter is followed by an investigation of active region degradation with increased annealing temperatures. The rapid degradation has been confirmed by PL and X-ray diffraction studies. Finally, device results are presented. Lasers show ultra-low CW threshold current densities (44 A/cm(2) at L -> infinity), in the wavelength range of 2.5-2.7 mu m. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：446 / 449

页数：4

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