DETERMINATION OF THE INTERNAL QUANTUM EFFICIENCY OF A PHOTODIODE BY MEANS OF ITS CURRENT-VOLTAGE CHARACTERISTIC

被引：3

作者：

Kovalev, A. A. ^{[1
]}

Liberman, A. A. ^{[1
]}

Mikryukov, A. S. ^{[1
]}

Moskalyuk, S. A. ^{[1
]}

机构：

[1] All Russia Res Inst Optophys Measurements VNIIOFI, Moscow, Russia

来源：

MEASUREMENT TECHNIQUES | 2011年 / 54卷 / 02期

关键词：

semiconductor photodiode; current-voltage characteristic; internal quantum efficiency;

D O I：

10.1007/s11018-011-9699-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

It is proposed for the first time that a number of basic characteristics of an optically thick photoelectric diode may be determined from its current-voltage characteristic. It is shown that it is theoretically possible to determine the internal quantum efficiency of a photodiode by means of model calculations. The solution of the inverse problem is based on a comparison of theoretical dependences obtained with the use of the PC1D program with "experimental" current-voltage characteristics.

引用

页码：157 / 161

页数：5

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