Experimental study of uniaxial stress effects on Coulomb-limited mobility in p-type metal-oxide-semiconductor field-effect transistors

被引：7

作者：

Kobayashi, Shigeki ^{[1
]}

Saitoh, Masumi ^{[1
]}

Nakabayashi, Yukio ^{[1
]}

Uchida, Ken ^{[1
]}

机构：

[1] Toshiba Co Ltd, Adv LSI Technol Lab, Yokohama, Kanagawa 2358522, Japan

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 20期

关键词：

D O I：

10.1063/1.2807832

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Uniaxial stress effects on Coulomb-limited mobility (mu(Coulomb)) in Si metal-oxide-semiconductor field-effect transistors (MOSFETs) are investigated experimentally. By using the four-point bending method, uniaxial stress corresponding to 0.1% strain is applied to MOSFETs along the channel direction. It is found that mu(Coulomb) in p-type MOSFETs is enhanced greatly by uniaxial stress; mu(Coulomb) is as sensitive as phonon-limited mobility. The high sensitivity of mu(Coulomb) in p-type MOSFETs to stress arises from the stress-induced change of hole effective mass. (c) 2007 American Institute of Physics.

引用

页数：3

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