Design on data driver IC for plasma display panel

被引：0

作者：

Sun, Weifeng ^{[1
]}

Wu, Jianhui ^{[1
]}

Lu, Shengli ^{[1
]}

Yi, Yangbo ^{[1
]}

Shi, Longxing ^{[1
]}

机构：

[1] SE Univ, Natl ASIC Syst Engn Res Ctr, Nanjing 210096, Jiangsu, Peoples R China

来源：

ASID'04: PROCEEDINGS OF THE 8TH ASIAN SYMPOSIUM ON INFORMATION DISPLAY | 2004年

关键词：

plasma display panel; data driver IC; high voltage CMOS; compatible process;

D O I：

暂无

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

In this paper, a novel high voltage CMOS (HV-CMOS) structure and a compatible Bulk-Silicon (BS) CMOS process for color plasma display panel(PDP) data driver ICs have been proposed. The breakdown voltage and the current of the PDP data driver IC using this technology were 100V and 42mA, respectively. The rise and fall time of the new PDP data driver IC was 19ns and 23ns, respectively. The cost was also reduced by 20% by using the BS substrate material compared with the Silicon-On-Isolator(SOI) material.

引用

页码：447 / 450

页数：4

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