Design on data driver IC for plasma display panel

被引:0
作者
Sun, Weifeng [1 ]
Wu, Jianhui [1 ]
Lu, Shengli [1 ]
Yi, Yangbo [1 ]
Shi, Longxing [1 ]
机构
[1] SE Univ, Natl ASIC Syst Engn Res Ctr, Nanjing 210096, Jiangsu, Peoples R China
来源
ASID'04: PROCEEDINGS OF THE 8TH ASIAN SYMPOSIUM ON INFORMATION DISPLAY | 2004年
关键词
plasma display panel; data driver IC; high voltage CMOS; compatible process;
D O I
暂无
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
In this paper, a novel high voltage CMOS (HV-CMOS) structure and a compatible Bulk-Silicon (BS) CMOS process for color plasma display panel(PDP) data driver ICs have been proposed. The breakdown voltage and the current of the PDP data driver IC using this technology were 100V and 42mA, respectively. The rise and fall time of the new PDP data driver IC was 19ns and 23ns, respectively. The cost was also reduced by 20% by using the BS substrate material compared with the Silicon-On-Isolator(SOI) material.
引用
收藏
页码:447 / 450
页数:4
相关论文
共 10 条
  • [1] CASTELLANOM JA, SID 00, P407
  • [2] High-voltage power integrated circuit technology using SOI for driving plasma display panels
    Kim, J
    Roh, TM
    Kim, SG
    Song, QS
    Lee, DW
    Koo, JG
    Cho, KI
    Ma, DS
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (06) : 1256 - 1263
  • [3] High voltage SOI CMOS IC technology for driving plasma display panels
    Kobayashi, K
    Yanagigawa, H
    Mori, K
    Yamanaka, S
    Fujiwara, A
    [J]. ISPSD '98 - PROCEEDINGS OF THE 10TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, 1998, : 141 - 144
  • [4] LEE MR, 1999, ISPSD 99, P249
  • [5] LEE MR, 1999, INT S POW SEM DEV IC, P285
  • [6] NAKANO M, 1989, P TECHN PAP 1989 INT, P55
  • [7] NUNOMURA K, 1997, P 4 INT DISPL WORKSH, P499
  • [8] Roh TM, 2000, J KOREAN PHYS SOC, V37, P889, DOI 10.3938/jkps.37.889
  • [9] A high performance plasma display panel driver IC using SOI
    Sumida, H
    Hirabayashi, A
    Shimabukuro, H
    Takazawa, Y
    Shigeta, Y
    [J]. ISPSD '98 - PROCEEDINGS OF THE 10TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, 1998, : 137 - 140
  • [10] Numerical analysis of SOI LDMOS using a recessed source and a trench drain
    Yoo, SJ
    Kim, SH
    Choi, YI
    Chung, SK
    [J]. MICROELECTRONICS JOURNAL, 2000, 31 (11-12) : 963 - 967