Preparation and Properties of Pb1-xSrx (Zr0.53Ti0.47) O3 Thin Films by Sol-Gel Method

被引：1
|
作者：
Cui, Yan [1 ,2 ]
Zhao, Jiaxin [2 ]
Zhang, Lvquan [2 ]
Xia, Jinsong [2 ]
Dong, Weijie [3 ]
Wang, Liding [2 ]
机构：
[1] Dalian Univ Technol, Key Lab Precis & Nontradit Machining Technol, Minist Educ, Dalian, Peoples R China
[2] Dalian Univ Technol, Key Lab Micro Nano Technol & Syst Liaoning Prov, Dalian, Peoples R China
[3] Dalian Univ Technol, Sch Electron & Informat Engn, Dalian, Peoples R China
来源：
FERROELECTRICS | 2010年 / 405卷
基金：
中国国家自然科学基金;
关键词：
PSZT thin films; Sr-doped; dielectric properties; leakage current; P-E hysteresis loops;
D O I：
10.1080/00150193.2010.483388
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Pb1-xSrx (Zr0.53Ti0.47) O3 (PSZT) thin films with different x values (x= 0, 0.02, 0.04, 0.06) are prepared by sol-gel method and their properties are studied. All PSZT thin films get a single perovskite phase. The dielectric properties are studied. The leakage current density at an applied electric field of 61.2 kV/cm is 293.0 x 10-9A/cm2 when x= 0.04. The remanent polarization and coercive field values of the PSZT (x = 0) thin film are 8.4C/cm2 and 67.5kV/cm, respectively.
引用
收藏
页码：255 / 261
页数：7
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