Interface induced hydrogen sensing in Pd nanoparticle/graphene composite layers

被引：53

作者：

Kumar, Rakesh ^{[1
]}

Malik, Shweta ^{[1
]}

Mehta, B. R. ^{[1
]}

机构：

[1] Indian Inst Technol Delhi, Dept Phys, Thin Film Lab, New Delhi 110016, India

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 2015年 / 209卷

关键词：

Graphene; Palladium; Hydrogen sensing; Nanocomposite; Nanoparticle; THIN-FILM; GRAPHENE; SENSORS;

D O I：

10.1016/j.snb.2014.12.037

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

In this work, the important role of electronic changes taking place at the palladium (Pd)-graphene interface during hydrogen sensing has been established by studying hydrogen sensing behaviour of Pd and Pd/graphene composite layers with different Pd thicknesses. CVD-grown single layer graphene and Pd nanoparticulate layers deposited by thermal evaporation method were used in this study. A drastic change in hydrogen sensing behaviour was observed in Pd/graphene samples as the topography of Pd layer changes from a continuous film to a discontinuous nanoparticulate layer and finally to isolated Pd nanoparticles. In case of Pd nanoparticles/graphene samples having isolated nanoparticles, the observed sensing behaviour is due to change in electronic nature of Pd/graphene interface on hydrogen exposure. Relatively lower value of work function of Palladium hydride in comparison to graphene results in electron migration and compensation of p-type charge carriers in graphene on hydrogenation of Pd. The hole doping at Pd-G interface is also confirmed by Raman spectroscopy. The Pd/graphene interface sensor with 10 nm of Pd thickness shows enhanced sensing response (at 2% hydrogen) of 51.4% with faster response time (6 s) in comparison to sensing response (41%) and response time (56s) in Pd thin film sensor having similar thickness. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：919 / 926

页数：8

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