Uniformity study of GaAs-based vertical-cavity surface-emitting laser epiwafer grown by MOCVD technique

被引：0

作者：

Alias, Mohd Sharizal ^{[1
]}

Leisher, Paul O. ^{[2
]}

Choquette, Kent D. ^{[2
]}

Anuar, Khairul ^{[1
]}

Siriani, Dominic ^{[2
]}

Mitani, Sufian ^{[1
]}

Razman Y., Mohd ^{[1
]}

Fatah A. M., Abdul ^{[1
]}

机构：

[1] Univ Putra Malaysia, MTDC, Idea Tower, TMR&D, Serdang 43400, Selangor, Malaysia

[2] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA

来源：

2006 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, PROCEEDINGS | 2006年

关键词：

D O I：

10.1109/SMELEC.2006.381052

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, a highly uniform 850 urn VCSEL epiwafer was grown by using MOCVD technique. The VCSEL quantum wells exhibit a peak emission wavelength of 839.5 nm. The grown epiwafer exhibits a Fabry-Perot cavity resonance at 846.5 nm. Various VCSEL devices fabricated from the center to the edge of the VCSEL epiwafer show similar trend for the L-I and output spectral characterizations. Devices fabricated at the edge of the epiwafer exhibits different characterization trends due to the growth limitations.

引用

页码：223 / +

页数：2

共 7 条

[1] Molecular beam epitaxy technology of III-V compound semiconductors for optoelectronic applications [J].

Cheng, KY .

PROCEEDINGS OF THE IEEE, 1997, 85 (11) :1694-1714

[2] Metalorganic chemical vapor deposition for optoelectronic devices [J].

Coleman, JJ .

PROCEEDINGS OF THE IEEE, 1997, 85 (11) :1715-1729

[3] LOW THRESHOLD PLANARIZED VERTICAL-CAVITY SURFACE-EMITTING LASERS [J].

GEELS, RS ;

CORZINE, SW ;

SCOTT, JW ;

YOUNG, DB ;

COLDREN, LA .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1990, 2 (04) :234-236

[4] ELIMINATION OF HETEROJUNCTION BAND DISCONTINUITIES BY MODULATION DOPING [J].

SCHUBERT, EF ;

TU, LW ;

ZYDZIK, GJ ;

KOPF, RF ;

BENVENUTI, A ;

PINTO, MR .

APPLIED PHYSICS LETTERS, 1992, 60 (04) :466-468

[5] DRASTIC REDUCTION OF SERIES RESISTANCE IN DOPED SEMICONDUCTOR DISTRIBUTED BRAGG REFLECTORS FOR SURFACE-EMITTING LASERS [J].

TAI, K ;

YANG, L ;

WANG, YH ;

WYNN, JD ;

CHO, AY .

APPLIED PHYSICS LETTERS, 1990, 56 (25) :2496-2498

[6]

WILMSEN CW, 1999, VERTICAL CAVITY SURF

[7] LOW SERIES RESISTANCE HIGH-EFFICIENCY GAAS ALGAAS VERTICAL-CAVITY SURFACE-EMITTING LASERS WITH CONTINUOUSLY GRADED MIRRORS GROWN BY MOCVD [J].

ZHOU, P ;

CHENG, J ;

SCHAUS, CF ;

SUN, SZ ;

ZHENG, K ;

ARMOUR, E ;

HAINS, C ;

HSIN, W ;

MYERS, DR ;

VAWTER, GA .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1991, 3 (07) :591-593

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