Novel scheme to fabricate SiGe nanowires using pulsed ultraviolet laser induced epitaxy

A novel scheme is employed to fabricate SiGe nanowires in a Si(100) substrate using pulsed ultraviolet (UV) laser induced epitaxy. In particular, Si(100) substrates are patterned with arrays of Ge wires similar to 60 nm in width and similar to 6 nm in thickness. A thin film low temperature silicon oxide is then deposited on the substrate. Sice nanowires with a cross section of similar to 25x95 nm(2) are formed using pulsed UV laser induced epitaxy. The structures are analyzed using scanning electron microscopy and cross-sectional transmission electron microscopy. Potential applications of the wire structure include base formation in a lateral SiGe heterojunction bipolar transistor and direct formation of SiGe/Si quantum wire structures in a silicon chip. (C) 1996 American Vacuum Society.