Carrier relaxation with LO phonon decay in semiconductor quantum dots

被引：0

作者：

Levetas, SA ^{[1
]}

Godfrey, MJ ^{[1
]}

Dawson, P ^{[1
]}

机构：

[1] Univ Manchester, Inst Sci & Technol, Dept Phys, Manchester M60 1QD, Lancs, England

来源：

PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II | 2001年 / 87卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Analysis of an exactly soluble model of phonons coupled to a carrier in a quantum dot provides a clear illustration of a phonon bottleneck to relaxation. The introduction of three-phonon interactions leads to a broad window for relaxation by the processes of LO phonon scattering and decay.

引用

页码：1333 / 1334

页数：2

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