Luminescence enhancement of plasma-etched InAsP/InGaAsP quantum wells

被引：4

作者：

Cao, Meng ^{[1
]}

Lao, Yanfeng ^{[1
]}

Wu, Huizhen ^{[1
,2
]}

Liu, Cheng ^{[1
]}

Xie, Zhengsheng ^{[1
]}

Cao, Chunfang ^{[1
]}

Wu, Huizhen ^{[1
,2
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China

[2] Zhejiang Univ, Dept Phys, Hangzhou 310027, Zhejiang, Peoples R China

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2008年 / 26卷 / 02期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1116/1.2831497

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Luminescence enhancement effects are observed in. the plasma-etched InAS(0.45)P(0.55)/ In(0.68)Ga(0.32)AS(0.45)P(0.55) quantum wells (QWs). Characterizations of photoluminescence, atomic force microscopy, and secondary-ion mass spectroscopy reveal that surface roughening due to ion bombardment onto surface and microstructure changes resulted from Ar+ ions tunneling into the material in the plasma etching process account for the PL enhancement phenomenon. The combination of plasma etching and selective lift-off of the InP cap layer of the InAS(0.45)P(0.55)/In(0.68)Ga(0.32)AS(0.45)P(0.55) QW structures allows us to separate the two enhancement factors, which indicates the At+ ions tunneling into the crystal is the dominant factor that enhances the luminescence emission of InAS(0.45)P(0.55)/In(0.68)Ga(0.32)AS(0.45)P(0.55) quantum wells. (C) 2008 American Vacuum Society.

引用

页码：219 / 223

页数：5

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