The Effect of the Surface Roughness Characteristics of the Contact Interface on the Thermal Contact Resistance of the PP-IGBT Module

被引：18

作者：

An, Tong ^{[1
,2
]}

Li, Zezheng ^{[1
,2
]}

Zhang, Yakun ^{[1
,2
]}

Qin, Fei ^{[1
,2
]}

Wang, Liang ^{[3
]}

Lin, Zhongkang ^{[3
]}

Tang, Xinling ^{[3
]}

Dai, Yanwei ^{[1
,2
]}

Gong, Yanpeng ^{[1
,2
]}

Chen, Pei ^{[1
,2
]}

机构：

[1] Beijing Univ Technol, Fac Mat & Mfg, Inst Elect Packaging Technol & Reliabil, Beijing 100124, Peoples R China

[2] Beijing Univ Technol, Beijing Key Lab Adv Mfg Technol, Beijing 100124, Peoples R China

[3] Global Energy Interconnect Res Inst Co Ltd, Beijing 100031, Peoples R China

来源：

IEEE TRANSACTIONS ON POWER ELECTRONICS | 2022年 / 37卷 / 06期

基金：

中国国家自然科学基金;

关键词：

Thermal resistance; Surface morphology; Surface roughness; Surface resistance; Rough surfaces; Contact resistance; Temperature measurement; Power cycling; press-pack insulated-gate bipolar transistor (PP-IGBT); surface roughness; thermal contact resistance; MECHANICAL ANALYSIS;

D O I：

10.1109/TPEL.2021.3134175

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this article, the correlation between the thermal contact resistance and the surface roughness characteristics of the contact interface in the press-pack insulated-gate bipolar transistor (PP-IGBT) modules during power cycling was studied by experimental measurements and finite-element (FE) simulation-based factorial design analysis. Thermal transient test technology was applied to examine the change in the thermal characteristic parameters of the PP-IGBT module. This shows that the increase in the thermal contact resistance of the Al metallization/emitter Mo contact interface occurs more dramatically during power cycling. A 3-D surface profilometer was used to evaluate the surface morphology parameters of the Al metallization/emitter Mo contact interface. The equivalent root-mean-square (RMS) roughness increases during power cycling, and the equivalent asperity slope and the equivalent spacing between asperities increase slightly. Additionally, the surface roughening in the corner area of the chip is more obvious than in other regions. A fractional factorial design analysis based on FE simulations was performed. The results indicate that the thermal contact resistance strongly depends on the main effects of the real contact area and the spacing between the asperities, and the RMS roughness and the asperity slope interaction.

引用

页码：7286 / 7298

页数：13

共 34 条

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