Sub-quarter micron metallization using ionized metal plasma technology

被引：0

作者：

Chen, F ^{[1
]}

Xu, Z ^{[1
]}

Sinha, A ^{[1
]}

机构：

[1] Appl Mat Inc, Santa Clara, CA 95054 USA

来源：

ADVANCED INTERCONNECTS AND CONTACT MATERIALS AND PROCESSES FOR FUTURE INTEGRATED CIRCUITS | 1998年 / 514卷

关键词：

D O I：

10.1557/PROC-514-65

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ionized Metal Plasma (IMP) technology has been developed for liners and wetting layer deposition of sub-quarter-micron devices. Numerical modeling showed the unique advantages of IMP source over ECR source and long throw sputtering in enhancing bottom coverage. Ti and TiN bottom coverage up to 70% were demonstrated on 0.18 mu m contact holes. The deposition rate, uniformity, bottom coverage and film stress were optimized by tuning RF and DC powers, process pressure and bias power. In situ TiS2 were formed in high aspect ratio contacts by depositing IMP Ti at an elevated temperature. The precisely controlled microstructure of IMP TiN film enabled low temperature aluminum planarization. The extendibility to 0.13 mu m technology node was demonstrated, and the application in copper metallization was revealed.

引用

页码：65 / 73

页数：9

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