Preparation of Ba-Ti-O films by laser chemical vapor deposition

被引:10
作者
Ito, Akihiko [1 ]
Guo, Dongyun [1 ]
Tu, Rong [1 ]
Goto, Takashi [1 ]
机构
[1] Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 9808577, Japan
关键词
Inorganic compound; Ceramics; Chemical vapor deposition; Microstructure; BATIO3; THIN-FILMS; HIGH-SPEED DEPOSITION; DIELECTRIC-PROPERTIES; PHASE-EQUILIBRIA; SYSTEM; MICROSTRUCTURE; GROWTH;
D O I
10.1016/j.matchemphys.2012.01.048
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Ba-Ti-O films were prepared on Pt-coated Si substrate by laser chemical vapor deposition, and their orientations and microstructures were compared. Ba2TiO4, BaTiO3, BaTi2O5, Ba4Ti13O30 and BaTi4O9 single-phase films were prepared at Ti to Ba molar ratio from 0.41 to 3.49. The alpha'-Ba2TiO4 film showed (010) and (091) co-orientation with elongated, truncated columnar grains. The BaTiO3 film was composed of triangular and hexagonal grains with slight (111) orientation. The BaTi2O5 film had (010) orientation and faceted columnar grains. The Ba4Ti13O40 film showed (1 0 0) and (0 1 2) co-orientation with shellfish-like grains. The BaTi4O9 film showed (0 1 0) orientation with slightly rounded faceted columnar grains. The deposition rates of Ba-Ti-O films ranged from 30 to 144 mu m h(-1). (C) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码:398 / 404
页数:7
相关论文
共 37 条
  • [1] Dielectric property of single crystalline BaTi2O5 prepared by a floating zone method
    Akashi, T
    Iwata, H
    Goto, T
    [J]. MATERIALS TRANSACTIONS, 2003, 44 (08) : 1644 - 1646
  • [2] High speed deposition of Y2O3 films by laser-assisted chemical vapor deposition
    Banal, R
    Kimura, T
    Goto, T
    [J]. MATERIALS TRANSACTIONS, 2005, 46 (09) : 2114 - 2116
  • [3] Cernea M, 2004, J OPTOELECTRON ADV M, V6, P1349
  • [4] EPITAXIAL-GROWTH OF BATIO3 THIN-FILMS BY PLASMA-ENHANCED METALORGANIC CHEMICAL VAPOR-DEPOSITION
    CHERN, CS
    ZHAO, J
    LUO, L
    LU, P
    LI, YQ
    NORRIS, P
    KEAR, B
    COSANDEY, F
    MAGGIORE, CJ
    GALLOIS, B
    WILKENS, BJ
    [J]. APPLIED PHYSICS LETTERS, 1992, 60 (09) : 1144 - 1146
  • [5] Etch mechanism of Ba2Ti9O20 dielectric thin film in inductively coupled Cl2/Ar plasma
    Efremov, Alexander
    Kim, Mansu
    Min, Nam-Ki
    Kwon, Kwang-Ho
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2008, 155 (06) : D468 - D473
  • [6] Epitaxial BaTiO3 films grown by aerosol MOCVD
    Gorbenko, OY
    Kaul, AR
    Wahl, G
    [J]. CHEMICAL VAPOR DEPOSITION, 1997, 3 (04) : 193 - &
  • [7] ORTHORHOMBIC BARIUM ORTHOTITANATE, ALPHA-'-BA2TIO4
    GUNTER, JR
    JAMESON, GB
    [J]. ACTA CRYSTALLOGRAPHICA SECTION C-CRYSTAL STRUCTURE COMMUNICATIONS, 1984, 40 (FEB) : 207 - 210
  • [8] High-speed deposition of Y-Si-O films by laser chemical vapor deposition using Nd:YAG laser
    Ito, Akihiko
    Endo, Jun
    Kimura, Teiichi
    Goto, Takashi
    [J]. SURFACE & COATINGS TECHNOLOGY, 2010, 204 (23) : 3846 - 3850
  • [9] Texture and orientation characteristics of α-Al2O3 films prepared by laser chemical vapor deposition using Nd:YAG laser
    Ito, Akihiko
    Kadokura, Hokuto
    Kimura, Teiichi
    Goto, Takashi
    [J]. JOURNAL OF ALLOYS AND COMPOUNDS, 2010, 489 (02) : 469 - 474
  • [10] Structure and dielectric properties of BaTi4O9 thin films for RF-MIM capacitor applications
    Jang, Bo-Yun
    Kim, Beom-Jong
    Jeong, Young-Hun
    Nahm, Sahn
    Sun, Ho-Jung
    Lee, Hwack-Ju
    [J]. JOURNAL OF ELECTROCERAMICS, 2006, 17 (2-4) : 387 - 391