Abrupt breakdown in dielectric/metal gate stacks: A potential reliability limitation?

被引：28
|
作者：
Kauerauf, T
Degraeve, R
Zahid, MB
Cho, M
Kaczer, B
Roussel, P
Roeseneken, G
Maes, H
De Gendt, S
机构：
[1] IMEC, B-3001 Louvain, Belgium
[2] Katholieke Univ Leuven, B-3001 Louvain, Belgium
[3] Liverpool John Moores Univ, Liverpool L3 5UX, Merseyside, England
[4] Seoul Natl Univ, Seoul, South Korea
来源：
IEEE ELECTRON DEVICE LETTERS | 2005年 / 26卷 / 10期
关键词：
dielectric breakdown (BD); metal gate; reliability;
D O I：
10.1109/LED.2005.856015
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In downscaled poly-Si gate MOSFET devices reliability margin is gained by progressive wearout. When the poly-Si gate is replaced with a metal gate, the slow wearout phase observed in ultrathin SiON and HfSiON dielectrics with poly-Si gate disappears, and with it, the reliability margin. We demonstrate for several combinations of dielectric and gate materials that the large abrupt current increase (Delta I) as compared to poly-Si is not likely due to process. issues, but is an intrinsic property of the dielectric/metal gate stack. The occurrence of large Delta I is a potential limitation for the reliability of metal gate devices.
引用
收藏
页码：773 / 775
页数：3
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