Large current gain and low operational voltage permeable metal-base organic transistors based on Au/Al double layer metal base

被引：11
|
作者：
Yi, Mingdong [1 ]
Huang, Jinying [1 ]
Ma, Dongge [1 ]
Huemmelgen, Ivo A. [2 ]
机构：
[1] Chinese Acad Sci, Changchun Inst Appl Chem, State Key Lab Polymer Phys & Chem, Grad Sch, Changchun 130022, Peoples R China
[2] Univ Fed Parana, Dept Fis, Grp Organ Optoelect Devices, BR-81531900 Curitiba, Parana, Brazil
来源：
ORGANIC ELECTRONICS | 2008年 / 9卷 / 04期
基金：
中国国家自然科学基金;
关键词：
permeable; metal base; organic transistors; Au/Al double layer metal base;
D O I：
10.1016/j.orgel.2008.02.018
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In order to realize the common-emitter characteristics of the tris(8-hydroxyquinoline) aluminium (Alq(3))-based organic transistors, we used Au/Al double metal layer as the base, thus the vertical metal-base transistors with structure of Al/n-Si/Au/Al/Alq(3)/LiF/Al were constructed. It was found that the contact properties between the base and the organic semiconductors play an important role in the device performance. The utilization of Au/Al double layer metal base allows the devices to operate at high gain in the common-emitter and common-base mode at low operational voltage. (C) 2008 Published by Elsevier B.V.
引用
收藏
页码：539 / 544
页数：6
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