Electrode engineering for improving resistive switching performance in single crystalline CeO2 thin films

被引：28

作者：

Liao, Zhaoliang ^{[1
,2
]}

Gao, Peng ^{[2
]}

Meng, Yang ^{[2
]}

Fu, Wangyang ^{[2
]}

Bai, Xuedong ^{[2
]}

Zhao, Hongwu ^{[2
]}

Chen, Dongmin ^{[2
]}

机构：

[1] Louisiana State Univ, Dept Phys & Astron, Baton Rouge, LA 70810 USA

[2] Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R China

来源：

SOLID-STATE ELECTRONICS | 2012年 / 72卷

基金：

中国国家自然科学基金;

关键词：

Resistive switching; CeO2; Retention; Schottky barrier; OXIDES; MEMORIES; CERIA;

D O I：

10.1016/j.sse.2011.10.001

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have studied the electrode effect on the resistive switching behavior in the single crystalline films of CeO2 grown on Nb-SrTiO3. The fabricated devices with the top electrode made of non-reactive metals (Ag, Au, Pt) show bipolar resistive switching but are volatile. In contrast, the devices with top electrodes made of reactive metals (Al, Ta,Ti) present different bipolar resistive switching direction and are non-volatile, with Ta one having the best in OFF/ON switching ratio. The devices with these kinds of electrodes also exhibit remarkably different rectification behavior because of the difference of electrode/CeO2 interface formation. These results demonstrate that it is possible to improve the performance of resistive switching by electrode engineering. (c) 2011 Elsevier Ltd. All rights reserved.

引用

页码：4 / 7

页数：4

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