Electrode engineering for improving resistive switching performance in single crystalline CeO2 thin films

被引：28
作者：
Liao, Zhaoliang [1 ,2 ]
Gao, Peng [2 ]
Meng, Yang [2 ]
Fu, Wangyang [2 ]
Bai, Xuedong [2 ]
Zhao, Hongwu [2 ]
Chen, Dongmin [2 ]
机构：
[1] Louisiana State Univ, Dept Phys & Astron, Baton Rouge, LA 70810 USA
[2] Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R China
来源：
SOLID-STATE ELECTRONICS | 2012年 / 72卷
基金：
中国国家自然科学基金;
关键词：
Resistive switching; CeO2; Retention; Schottky barrier; OXIDES; MEMORIES; CERIA;
D O I：
10.1016/j.sse.2011.10.001
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have studied the electrode effect on the resistive switching behavior in the single crystalline films of CeO2 grown on Nb-SrTiO3. The fabricated devices with the top electrode made of non-reactive metals (Ag, Au, Pt) show bipolar resistive switching but are volatile. In contrast, the devices with top electrodes made of reactive metals (Al, Ta,Ti) present different bipolar resistive switching direction and are non-volatile, with Ta one having the best in OFF/ON switching ratio. The devices with these kinds of electrodes also exhibit remarkably different rectification behavior because of the difference of electrode/CeO2 interface formation. These results demonstrate that it is possible to improve the performance of resistive switching by electrode engineering. (c) 2011 Elsevier Ltd. All rights reserved.
引用
收藏
页码：4 / 7
页数：4
相关论文
共 50 条
[11]   Epitaxial CeO2 thin films for a mechanism study of resistive random access memory (ReRAM) [J].
Yoshitake, Michiko ;
Vaclavu, Michal ;
Chundak, Mykhailo ;
Matolin, Vladimir ;
Chikyow, Toyohiro .
JOURNAL OF SOLID STATE ELECTROCHEMISTRY, 2013, 17 (12) :3137-3144
[12]   Epitaxial CeO2 thin films for a mechanism study of resistive random access memory (ReRAM) [J].
Michiko Yoshitake ;
Michal Vaclavu ;
Mykhailo Chundak ;
Vladimir Matolin ;
Toyohiro Chikyow .
Journal of Solid State Electrochemistry, 2013, 17 :3137-3144
[13]   Mechanisms of resistive switching in BiFeO3 thin films modulated by bottom electrode [J].
Liu, Ying ;
Qi, Yajun ;
Zhou, Peng ;
Guan, Changxin ;
Chen, Hao ;
Wang, Jinzhao ;
Ma, Zhijun ;
Zhang, Tianjin ;
Liu, Yuan .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2018, 51 (02)
[14]   Thickness dependent phase transformation and resistive switching performance of HfO2 thin films [J].
Dehury, Taranga ;
Kumar, Sandeep ;
Sinha, Akhoury Sudhir Kumar ;
Gupta, Mukul ;
Rath, Chandana .
MATERIALS CHEMISTRY AND PHYSICS, 2024, 315
[15]   Top electrode effects on resistive switching behavior in CuO thin films [J].
Ying Li ;
Gaoyang Zhao ;
Jian Su ;
Erfeng Shen ;
Yang Ren .
Applied Physics A, 2011, 104 :1069-1073
[16]   Influence of top electrode on resistive switching effect of chitosan thin films [J].
Kim My Tran ;
Dinh Phuc Do ;
Kieu Hanh Ta Thi ;
Ngoc Kim Pham .
JOURNAL OF MATERIALS RESEARCH, 2019, 34 (23) :3899-3906
[17]   Texturing of pure and doped CeO2 thin films by EBPVD through target engineering [J].
Arunkumar, P. ;
Ramaseshan, R. ;
Dash, S. ;
Basu, Joysurya ;
Ravindran, T. R. ;
Balakumar, S. ;
Babu, K. Suresh .
RSC ADVANCES, 2014, 4 (63) :33338-33346
[18]   Refractive index profiling of CeO2 thin films using reverse engineering methods [J].
Janicki, V ;
Zorc, H .
THIN SOLID FILMS, 2002, 413 (1-2) :198-202
[19]   Interface-Engineered Resistive Switching: CeO2 Nanocubes as High-Performance Memory Cells [J].
Younis, Adnan ;
Chu, Dewei ;
Mihail, Ionsecu ;
Li, Sean .
ACS APPLIED MATERIALS & INTERFACES, 2013, 5 (19) :9429-9434
[20]   TiN electrode-induced bipolar resistive switching of TiO2 thin films [J].
Do, Young Ho ;
Kwak, June Sik ;
Bae, Yoon Cheol ;
Lee, Jong Hyun ;
Kim, Yongmin ;
Im, Hyunsik ;
Hong, Jin Pyo .
CURRENT APPLIED PHYSICS, 2010, 10 (01) :E71-E74
12345