Electrode engineering for improving resistive switching performance in single crystalline CeO2 thin films

被引：27
|
作者：
Liao, Zhaoliang [1 ,2 ]
Gao, Peng [2 ]
Meng, Yang [2 ]
Fu, Wangyang [2 ]
Bai, Xuedong [2 ]
Zhao, Hongwu [2 ]
Chen, Dongmin [2 ]
机构：
[1] Louisiana State Univ, Dept Phys & Astron, Baton Rouge, LA 70810 USA
[2] Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R China
来源：
SOLID-STATE ELECTRONICS | 2012年 / 72卷
基金：
中国国家自然科学基金;
关键词：
Resistive switching; CeO2; Retention; Schottky barrier; OXIDES; MEMORIES; CERIA;
D O I：
10.1016/j.sse.2011.10.001
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have studied the electrode effect on the resistive switching behavior in the single crystalline films of CeO2 grown on Nb-SrTiO3. The fabricated devices with the top electrode made of non-reactive metals (Ag, Au, Pt) show bipolar resistive switching but are volatile. In contrast, the devices with top electrodes made of reactive metals (Al, Ta,Ti) present different bipolar resistive switching direction and are non-volatile, with Ta one having the best in OFF/ON switching ratio. The devices with these kinds of electrodes also exhibit remarkably different rectification behavior because of the difference of electrode/CeO2 interface formation. These results demonstrate that it is possible to improve the performance of resistive switching by electrode engineering. (c) 2011 Elsevier Ltd. All rights reserved.
引用
收藏
页码：4 / 7
页数：4
相关论文
共 50 条
  • [1] Chemical defect-dependent resistive switching characterization in CeO2 thin films
    Lan, Tran Thi Be
    Li, Yu-Teng
    Sun, An-Cheng Aidan
    Lu, Hsi-Chuan
    Wang, Sea-Fue
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2022, 137
  • [2] Effect of p-n interface on resistive switching of NiO/CeO2 thin films
    Li, Jian-Chang
    Cui, Hai-Peng
    Hou, Xue-Yan
    JOURNAL OF ALLOYS AND COMPOUNDS, 2018, 752 : 247 - 252
  • [3] Laser assembly of CeO2 nanobrushes and their resistive switching performance
    Wu, Ling
    Ran, Lei
    Lv, Yifeng
    Wang, Tingbin
    Zhang, Shuowen
    Tofil, Szymon
    Fan, Lisha
    Yao, Jianhua
    JOURNAL OF ALLOYS AND COMPOUNDS, 2024, 1009
  • [4] Reproducible resistive switching behavior in sputtered CeO2 polycrystalline films
    Lin, Chih-Yang
    Lee, Dai-Ying
    Wang, Sheng-Yi
    Lin, Chun-Chieh
    Tseng, Tseung-Yuen
    SURFACE & COATINGS TECHNOLOGY, 2008, 203 (5-7): : 480 - 483
  • [5] Engineering of Grain Boundaries in CeO2 Enabling Tailorable Resistive Switching Properties
    Dou, Hongyi
    Hellenbrand, Markus
    Xiao, Ming
    Hu, Zedong
    Kunwar, Sundar
    Chen, Aiping
    MacManus-Driscoll, Judith L.
    Jia, Quanxi
    Wang, Haiyan
    ADVANCED ELECTRONIC MATERIALS, 2023, 9 (05)
  • [6] Thickness effect on the bipolar switching mechanism for nonvolatile resistive memory devices based on CeO2 thin films
    Rana, Anwar Manzoor
    Ismail, M.
    Ahmed, E.
    Talib, I.
    Khan, Tahira
    Hussain, M.
    Nadeem, M. Y.
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2015, 39 : 211 - 216
  • [7] Resistive switching behaviour of highly epitaxial CeO2 thin film for memory application
    Zhang, Jun
    Zhao, Hongbin
    Wei, Feng
    Yang, Mengmeng
    Yang, Zhimin
    Chen, Qiuyun
    Chen, Jun
    PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2014, 8 (01): : 95 - 99
  • [8] Single crystalline CeO2 nanotubes
    Cao, Fangxian
    Zhang, Mingkai
    Yang, Kaili
    Tian, Zhimin
    Li, Jing
    Qu, Yongquan
    NANO RESEARCH, 2021, 14 (03) : 715 - 719
  • [9] Single crystalline CeO2 nanotubes
    Fangxian Cao
    Mingkai Zhang
    Kaili Yang
    Zhimin Tian
    Jing Li
    Yongquan Qu
    Nano Research, 2021, 14 : 715 - 719
  • [10] Enhanced resistive switching performance in rare-earth/high-κ CeO2/ZrO2 nanocomposite films
    Long, Zhao-Gen
    Zheng, Chen-Ping
    Li, Jian-Chang
    PHYSICS LETTERS A, 2021, 386
12345