Direct coupling of pulsed radio frequency and pulsed high power in novel pulsed power system for plasma immersion ion implantation

被引：2

作者：

Gong, Chunzhi ^{[1
]}

Tian, Xiubo ^{[1
]}

Yang, Shiqin ^{[1
]}

Fu, Ricky K. Y. ^{[2
]}

Chu, Paul K. ^{[2
]}

机构：

[1] Harbin Inst Technol, Sch Mat Sci & Engn, State Key Lab Adv Welding Prod & Technol, Harbin 150001, Peoples R China

[2] City Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R China

来源：

REVIEW OF SCIENTIFIC INSTRUMENTS | 2008年 / 79卷 / 04期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1063/1.2906220

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

A novel power supply system that directly couples pulsed high voltage (HV) pulses and pulsed 13.56 MHz radio frequency (rf) has been developed for plasma processes. In this system, the sample holder is connected to both the rf generator and HV modulator. The coupling circuit in the hybrid system is composed of individual matching units, low pass filters, and voltage clamping units. This ensures the safe operation of the rf system even when the HV is on. The PSPICE software is utilized to optimize the design of circuits. The system can be operated in two modes. The pulsed rf discharge may serve as either the seed plasma source for glow discharge or high-density plasma source for plasma immersion ion implantation (PIII). The pulsed high-voltage glow discharge is induced when a rf pulse with a short duration or a larger time interval between the rf and HV pulses is used. Conventional PIII can also be achieved. Experiments conducted on the new system confirm steady and safe operation. (C) 2008 American Institute of Physics.

引用

页数：5

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