Anthradithiophene based hole -transport material for efficient and stable perovskite solar cells

被引:17
|
作者
Wu, Guohu [1 ,2 ]
Zhang, Yaohong [3 ]
Kaneko, Ryuji [2 ,4 ]
Kojima, Yoshiyuki [2 ]
Islam, Ashraful [4 ]
Sugawa, Kosuke [2 ]
Otsuki, Joe [2 ]
Liu, Shengzhong [1 ]
机构
[1] Shaanxi Normal Univ, Shaanxi Engn Lab Adv Energy Technol, Key Lab Appl Surface & Colloid Chem,Sch Mat Sci &, Natl Minist Educ,Shaanxi Key Lab Adv Energy Devic, Xian 710119, Peoples R China
[2] Nihon Univ, Coll Sci & Technol, Chiyoda Ku, Tokyo 1018308, Japan
[3] Univ Electrocommun, Fac Informat & Engn, Dept Engn Sci, Chofu, Tokyo 1828585, Japan
[4] Natl Inst Mat Sci NIMS, Photovolta Mat Grp, Tsukuba, Ibaraki 3050047, Japan
来源
关键词
LOW-COST; PERFORMANCE; INTERLAYER; CORE;
D O I
10.1016/j.jechem.2020.02.021
中图分类号
O69 [应用化学];
学科分类号
081704 ;
摘要
A novel hole-transport material (HTM) based on an anthradithiophene central bridge named BTPA-7 is developed. In comparison to spiro-OMeTAD (2,2′,7,7′-tetrakis-(N,N-di-p-methoxyphenylamine)-9,9′-spirobifluorene), the synthetic steps of BTPA-7 are greatly reduced from 6 to 3 and the synthetic cost of BTPA-7 is nearly a half that of spiro-OMeTAD. Moreover, BTPA-7 exhibits a relatively lower conductivity but higher hole mobility and higher glass transition temperature (Tg) than spiro-OMeTAD. Compared with the photovolatic performance for spiro-OMeTAD, FA0.85MA0.15PbI3 and MAPbI3 PSC devices based on BTPA-7 exhibit slightly lower PCEs with the values of 17.58% (18.88% for spiro-OMeTAD) and 11.90% (13.25% for spiro-OMeTAD), respectively. Nevertheless, a dramatically higher Jsc of PSC based on BTPA-7 is achieved, which arises from the higher hole mobility of BTPA-7. In addition, the relatively hydrophobic character of BTPA-7 eventually enhances the PSC device stability. Lower cost, higher hole mobility, higher Tg, satisfactory photovoltaic performance, and superior device stability of BTPA-7 can be utilized as a substitute for spiro-OMeTAD in PSCs. © 2020
引用
收藏
页码:293 / 298
页数:6
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