Atomic hydrogen enhanced reflow of copper

被引：12

作者：

Miyake, T ^{[1
]}

Petek, H ^{[1
]}

Takeda, K ^{[1
]}

Hinode, K ^{[1
]}

机构：

[1] HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO 185,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 10期

关键词：

D O I：

10.1063/1.118541

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A low temperature technique for copper metallization using sputter-reflow process is investigated. Metallization of 0.15-1.5 mu m prepatterned trenches at a temperature of 320 degrees C by atomic hydrogen enhanced reflow of sputtered Cu films is described. Debye temperature of a single crystal Cu(110) surface measured by He atom scattering indicates that surface H reduces the surface Cu-Cu bonding strength. Moreover, atomic H efficiently removes oxygen and carbon impurities from the sputtered Cu films at surface temperatures of > 150 degrees C. (C) 1997 American Institute of Physics.

引用

页码：1239 / 1241

页数：3

共 14 条

[1]

Abe K., 1995, P VLSI MULT INT C, P308

[2]

ARMAND G, 1977, P 7 INT VAC C 3 INT, P1361

[3] DOUBLE-LEVEL COPPER INTERCONNECTIONS USING SELECTIVE COPPER CVD [J].

AWAYA, N ;

ARITA, Y .

JOURNAL OF ELECTRONIC MATERIALS, 1992, 21 (10) :959-964

[4]

BAI G, 1996, S VLSI TECHN, P48

[5] ATOMIC-HYDROGEN ADSORPTION ON SINTERED THIN COPPER-FILMS [J].

DUS, R ;

NOWICKA, E ;

LISOWSKI, W ;

WOLFRAM, Z .

APPLIED SURFACE SCIENCE, 1995, 90 (03) :277-282

[6]

GARDNER DS, 1995, P VLSI VMIC, P287

[7] H-2 DISSOCIATION AT METAL-SURFACES [J].

HARRIS, J ;

ANDERSSON, S .

PHYSICAL REVIEW LETTERS, 1985, 55 (15) :1583-1586

[8]

HULPKE E, 1993, SPRINGER SERIES SURF, V27

[9]

MIYAKE T, UNPUB

[10] ACTIVATION-ENERGY FOR ELECTROMIGRATION IN CU FILMS [J].

PARK, CW ;

VOOK, RW .

APPLIED PHYSICS LETTERS, 1991, 59 (02) :175-177

← 1 2 →