The structural, electrical, and optical properties of SnO2 films prepared by reactive magnetron sputtering: Influence of substrate temperature and O2 flow rate

被引：31

作者：

Tao, Ye ^{[1
]}

Zhu, Bailin ^{[1
]}

Yang, Yuting ^{[1
]}

Wu, Jun ^{[1
]}

Shi, Xinwei ^{[2
]}

机构：

[1] Wuhan Univ Sci & Technol, State Key Lab Refractories & Met, Wuhan 430081, Peoples R China

[2] Zhengzhou Univ, Key Lab Mat Phys, Minist Educ, Zhengzhou 450052, Peoples R China

来源：

MATERIALS CHEMISTRY AND PHYSICS | 2020年 / 250卷

关键词：

SnO2; films; Reactive magnetron sputtering; Substrate temperature; O-2 flow rate; Transparent conductive properties; Photoluminescence; TIN OXIDE-FILMS; THIN-FILMS; ELECTRONIC-STRUCTURE; PHOTOLUMINESCENCE; ZNO; DEPOSITION; SEMICONDUCTOR; STABILITY; MECHANISM; TRANSPORT;

D O I：

10.1016/j.matchemphys.2020.123129

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electrical and optical properties of SnO2 films prepared by sputtering are closely related to the substrate temperature and O-2 flow rate, but the effect of these two parameters is not clearly clarified in previous investigations. In this study, the SnO2 films were deposited on glass substrate by reactive RF magnetron sputtering using Sn target at substrate temperature of room temperature (RT), 150 and 300 degrees C. At each substrate temperature, the structural, electrical and optical properties of the films were investigated as a function of O-2 flow rate. By exposing typical films in damp-heat (DH) environment (85% relative humidity and 85 degrees C), the stability of electrical properties of the films was investigated. The results indicate that the SnO2 films with better transparent conductive properties can be obtained in an optimized O-2 flow rate range at each substrate temperature. Compared with the crystalline films deposited at 150 and 300 degrees C, the amorphous films deposited at RT can achieve better transparent conductive properties (resistivity of 3.65 x 10(-3) Omega cm and transmittance of 81.50% can be obtain simultaneously). However, the electrical properties of the films deposited at RT obviously degrade after DH exposure over one month. Besides, the analyses of photoluminescence (PL) spectra confirm that oxygen vacancy (V-O) concentration plays a vital role in conductive properties of the films.

引用

页数：11

共 44 条

[41] Structural, electrical, and optical properties of F-doped SnO or SnO2 films prepared by RF reactive magnetron sputtering at different substrate temperatures and O2 fluxes [J].

Zhu, B. L. ;

Zhao, X. ;

Hu, W. C. ;

Li, T. T. ;

Wu, J. ;

Gan, Z. H. ;

Liu, J. ;

Zeng, D. W. ;

Xie, C. S. .

JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 719 :429-437

[42] Transparent conductive F-doped SnO2 films prepared by RF reactive magnetron sputtering at low substrate temperature [J].

Zhu, B. L. ;

Yang, Y. T. ;

Hu, W. C. ;

Wu, J. ;

Gan, Z. H. ;

Liu, J. ;

Zeng, D. W. ;

Xie, C. S. .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2017, 123 (04)

[43] Investigation of Structural, Electrical, and Optical Properties for Al-Doped ZnO Films Deposited at Different Substrate Temperatures and H2 Ratios [J].

Zhu, B. L. ;

Wang, J. ;

Zhu, S. J. ;

Wu, J. ;

Zeng, D. W. ;

Xie, C. S. .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2012, 159 (05) :H536-H544

[44] Characteristics of Al-doped ZnO thin films prepared in Ar + H2 atmosphere and their vacuum annealing behavior [J].

Zhu, Bailin ;

Lu, Kun ;

Wang, Jun ;

Li, Taotao ;

Wu, Jun ;

Zeng, Dawen ;

Xie, Changsheng .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2013, 31 (06)

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