Linearity Improvement for Single-GaN HEMT Dual-Band Power Amplifier in Concurrent Operation Mode

被引：0

作者：

Maruyama, Alice ^{[1
]}

Takayama, Yoichiro ^{[1
]}

Ishikawa, Ryo ^{[1
]}

Honjo, Kazuhiko ^{[1
]}

机构：

[1] Univ Electrocommun, Chofu, Tokyo, Japan

来源：

2017 IEEE ASIA PACIFIC MICROWAVE CONFERENCE (APMC) | 2017年

关键词：

dual-band; power amplifier; concurrent operation mode; cross-modulation; microwave;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A single-GaNHEMT dual-band power amplifier with a spurious-controlling circuit to improve concurrent amplifying linearity is presented. The behavior of the output power and efficiency characteristics of the dual-band amplifier were analyzed using FET transconductance(g(mi)), and the effects of cross-modulation in concurrent-mode are shown shown. The fabricated 0.8-/2.2- GHz dual-band GaNHEMT amplifier consisting of dual-frequency-band matching circuits showed a deterioration of power response linearity at low input power levels in dual-band concurrent operation. Stubs for short-circuiting second order intermodulation components were added to the input matching circuit and the deterioration of power response linearity was successfully improved.

引用

页码：995 / 998

页数：4

共 7 条

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