Pseudopotential study of bonding and ionicity in InP at various pressures

被引：12

作者：

Bouarissa, N ^{[1
]}

机构：

[1] Univ Setif, Dept Phys, Setif 19000, Algeria

来源：

INFRARED PHYSICS & TECHNOLOGY | 1999年 / 40卷 / 02期

关键词：

D O I：

10.1016/S1350-4495(98)00055-3

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We have investigated the chemical trends of the m-V semiconductor InP in the zinc-blende structure under hydrostatic pressure by means of empirical pseudopotential calculations. The pressure coefficients of the main band gaps (at Gamma, X, and L) are given and compared with the available experimental data. In agreement with experiments, we find that the transverse effective charge decreases with increasing pressure which indicates the increased covalent bonding in the studied material. (C) 1999 Published by Elsevier Science B.V. All rights reserved.

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页码：117 / 121

页数：5

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