Study on the giant positive magnetoresistance and Hall effect in ultrathin graphite flakes

被引:8
|
作者
Vansweevelt, Rob [1 ]
Mortet, Vincent [1 ]
D'Haen, Jan [1 ,2 ]
Ruttens, Bart [1 ,2 ]
Van Haesendonck, Chris [3 ]
Partoens, Bart [4 ]
Peeters, Francois M. [4 ]
Wagner, Patrick [1 ,2 ]
机构
[1] Hasselt Univ, Inst Mat Res, B-3590 Diepenbeek, Belgium
[2] IMEC Vzw, Div IMOMEC, B-3590 Diepenbeek, Belgium
[3] Katholieke Univ Leuven, Lab Solid State Phys & Magnetism, B-3001 Louvain, Belgium
[4] Univ Antwerp, Dept Phys, B-2020 Antwerp, Belgium
关键词
graphite; Hall effect; magnetoresistance; NEGATIVE MAGNETORESISTANCE; KOHLERS RULE; GRAPHENE; FILMS; VIOLATION; GAS;
D O I
10.1002/pssa.201001206
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this paper, we report on the electronic transport properties of mesoscopic, ultrathin graphite flakes with a thickness corresponding to a stack of 150 graphene layers. The graphite flakes show an unexpectedly strong positive magnetoresistance (PMR) already at room temperature, which scales in good approximation with the square of the magnetic field. Furthermore, we show that the resistivity is unaffected by magnetic fields oriented in plane with the graphene layers. Hall effect measurements indicate that the charge carriers are p-type and their concentration increases with increasing temperature while the mobility is decreasing. The Hall voltage is non-linear in higher magnetic fields. Possible origins of the observed effects are discussed. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码:1252 / 1258
页数:7
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