Improved performance of CsPbBr3 perovskite light-emitting devices by both boundary and interface defects passivation

被引：30

作者：

Song, Li ^{[1
,2
]}

Guo, Xiaoyang ^{[1
]}

Hu, Yongsheng ^{[1
]}

Lv, Ying ^{[1
]}

Lin, Jie ^{[1
]}

Fan, Yi ^{[1
]}

Zhang, Nan ^{[1
]}

Liu, Xingyuan ^{[1
]}

机构：

[1] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, State Key Lab Luminescence & Applicat, Changchun 130033, Jilin, Peoples R China

[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China

来源：

NANOSCALE | 2018年 / 10卷 / 38期

基金：

中国国家自然科学基金;

关键词：

HYBRID PEROVSKITE; INORGANIC PEROVSKITES; QUANTUM DOTS; DIODES; EFFICIENT; VOLTAGE; FILMS;

D O I：

10.1039/c8nr06311g

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Significantly enhanced luminance and current efficiency for inorganic light-emitting devices have been obtained by tetrabutylammonium bromide (TBAB) additive into perovskite precursors. Reduced nonradiative defects primarily passivated by TBAB and increased exciton binding energy are responsible for improvement of PeLED performance. By employing a TBAB-treated interfacial layer, interface defects are reduced and it results in further promotion of electroluminescence performance of PeLED, including turn-on voltage of 2.6 V, brightness as high as 67300 cd m(-2), current efficiency of 22.5 cd A(-1) and external quantum efficiency of 6.28%. Our results shed light on optimization of inorganic PeLEDs by focusing on the removal of defects both at the grain boundaries and the interfaces between carrier transport layers and perovskite emitting layers.

引用

页码：18315 / 18322

页数：8

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