Reconfigurable nanoelectronics using graphene based spintronic logic gates

被引:3
作者
Dery, Hanan [1 ,2 ]
Wu, Hui [1 ]
Ciftcioglu, Berkehan [1 ]
Huang, Michael [1 ]
Song, Yang [2 ]
Kawakami, Roland [3 ]
Shi, Jing [3 ]
Krivorotov, Ilya [4 ]
Telesca, Donald A. [5 ]
Zutic, Igor [6 ]
Sham, Lu J. [7 ]
机构
[1] Univ Rochester, Dept Elect & Comp Engn, 601 Elmwood Ave, Rochester, NY 14627 USA
[2] Univ Rochester, Dept Phys, Rochester, NY 14627 USA
[3] Univ Calif Riverside, Dept Phys, Riverside, CA 92521 USA
[4] Univ Calif Irvine, Dept Phys, Irvine, CA 92697 USA
[5] AERL RVSEF, Space Elect Branch, Kirtland AFB, NM 87117 USA
[6] SUNY Buffalo, Dept Phys, Buffalo, NY 14260 USA
[7] Univ Calif San Diego, Dept Phys, La Jolla, CA 92093 USA
来源
SPINTRONICS IV | 2011年 / 8100卷
关键词
spintronics; network search engines; content addressable memory; MAGNETIC TUNNEL-JUNCTIONS; SPIN-TRANSFER; ALGORITHM; MODEL;
D O I
10.1117/12.890318
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
This paper presents a novel design concept for spintronic nanoelectronics that emphasizes a seamless integration of spin-based memory and logic circuits. The building blocks are magneto-logic gates(1) based on a hybrid graphene/ferromagnet material system. We use network search engines as a technology demonstration vehicle and present a spin-based circuit design with smaller area, faster speed, and lower energy consumption than the state-of-the-art CMOS counterparts. This design can also be applied in applications such as data compression,(2-5) coding(6) and image recognition.(7,8) In the proposed scheme, over 100 spin-based logic operations are carried out before any need for a spin-charge conversion. Consequently, supporting CMOS electronics requires little power consumption. The spintronic-CMOS integrated system can be implemented on a single 3-D chip. These nonvolatile logic circuits hold potential for a paradigm shift in computing applications.
引用
收藏
页数:11
相关论文
共 34 条
[11]   Tunneling Spin Injection into Single Layer Graphene [J].
Han, Wei ;
Pi, K. ;
McCreary, K. M. ;
Li, Yan ;
Wong, Jared J. I. ;
Swartz, A. G. ;
Kawakami, R. K. .
PHYSICAL REVIEW LETTERS, 2010, 105 (16)
[12]   Electrical detection of spin precession in single layer graphene spin valves with transparent contacts [J].
Han, Wei ;
Pi, K. ;
Bao, W. ;
McCreary, K. M. ;
Li, Yan ;
Wang, W. H. ;
Lau, C. N. ;
Kawakami, R. K. .
APPLIED PHYSICS LETTERS, 2009, 94 (22)
[13]   Electron-Hole Asymmetry of Spin Injection and Transport in Single-Layer Graphene [J].
Han, Wei ;
Wang, W. H. ;
Pi, K. ;
McCreary, K. M. ;
Bao, W. ;
Li, Yan ;
Miao, F. ;
Lau, C. N. ;
Kawakami, R. K. .
PHYSICAL REVIEW LETTERS, 2009, 102 (13)
[14]   Observation of spin-transfer switching in deep submicron-sized and low-resistance magnetic tunnel junctions [J].
Huai, YM ;
Albert, F ;
Nguyen, P ;
Pakala, M ;
Valet, T .
APPLIED PHYSICS LETTERS, 2004, 84 (16) :3118-3120
[15]   Magnetic tunnel junctions for spintronic memories and beyond [J].
Ikeda, Shoji ;
Hayakawa, Jun ;
Lee, Young Min ;
Matsukura, Futnihifo ;
Ohno, Yuzo ;
Hanyu, Takahiro ;
Ohno, Hideo .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2007, 54 (05) :991-1002
[16]   Current-driven magnetization reversal and spin-wave excitations in Co/Cu/Co pillars [J].
Katine, JA ;
Albert, FJ ;
Buhrman, RA ;
Myers, EB ;
Ralph, DC .
PHYSICAL REVIEW LETTERS, 2000, 84 (14) :3149-3152
[17]   Spin-transfer-induced precessional magnetization reversal [J].
Kent, AD ;
Ozyilmaz, B ;
del Barco, E .
APPLIED PHYSICS LETTERS, 2004, 84 (19) :3897-3899
[18]  
KOMOTO E, 1993, 1993 SYMPOSIUM ON VLSI CIRCUITS, P37
[19]   CAM BASED VLSI ARCHITECTURES FOR DYNAMIC HUFFMAN CODING [J].
LIU, LY ;
WANG, JF ;
WANG, RJ ;
LEE, JY .
IEEE TRANSACTIONS ON CONSUMER ELECTRONICS, 1994, 40 (03) :282-289
[20]   Spin transfer in nanomagnetic devices with perpendicular anisotropy [J].
Meng, H ;
Wang, JP .
APPLIED PHYSICS LETTERS, 2006, 88 (17)