AC conductivity and dielectric properties of GeSexTl0.3 amorphous thin films

AC conductivity and dielectric properties have been studied for amorphous thin films with different thicknesses of glassy system GeSexTl0.3 with X = 3, 4 that prepared with thermal evaporation technique. The measurements are taken at temperature range (303-403 K) and frequency range (10(2)-10(5) Hz). AC conductivity sigma(ac)(omega) is found to be proportional to omega(s) where s < 1. The temperature dependence of the ac conductivity and the parameter s can be discussed with the aim of the correlated barrier-hopping (CBH) model. The dielectric constant epsilon' and the dielectric loss epsilon '' showed frequency and temperature dependence. The maximum barrier height W-M calculated from the dielectric measurements according to Giuntini equation are in good agreement with that proposed by the theory of hopping of charge carriers over a potential barrier as suggested by Elliott in the case of chalcogenide glasses. (C) 2011 Elsevier B.V. All rights reserved.