Passively mode-locked diode-pumped Tm3+:YLF laser emitting at 1.91 μm using a GaAs-based SESAM

被引：16
|
作者：
Tyazhev, A. [1 ]
Soulard, R. [2 ]
Godin, T. [1 ]
Paris, M. [1 ]
Brasse, G. [2 ]
Doualan, J-L [2 ]
Braud, A. [2 ]
Moncorge, R. [2 ]
Laroche, M. [2 ]
Camy, P. [2 ]
Hideur, A. [1 ]
机构：
[1] Normandie Univ, CNRS, CORIA UMR 6614, INSA,Univ Rouen, Ave Univ,BP 12, F-76801 St Etienne Du Rouvray, France
[2] Normandie Univ, UMR 6252 CEA, Ctr Rech Ions Mat & Photon CIMAP, CNRS,ENSICAEN, 6 Blvd Marechal Juin, F-14050 Caen, France
来源：
LASER PHYSICS LETTERS | 2018年 / 15卷 / 04期
关键词：
diode-pumped; passively mode-locked; crystalline laser; Tm-doped; fluoride crystals; eye-safe region; LOCKING; FEMTOSECOND; GENERATION; ABSORBER; TM;
D O I：
10.1088/1612-202X/aaa9aa
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We report on a diode-pumped Tm:YLF laser passively mode-locked with an InGaAs saturable absorber. The laser emits a train of 31 ps pulses at a wavelength of 1.91 mu m with a repetition rate of 94 MHz and a maximum average power of 95 mW. A sustained and robust mode-locking with a signal-to-noise ratio of similar to 70 dB is obtained even at high relative air humidity, making this system attractive for applications requiring ultra-short pulses in the spectral window just below 2 mu m.
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页数：6
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