Free-Standing Luminescent Layers of Porous Silicon

被引：5

作者：

Goryachev, D. N. ^{[1
]}

Belyakov, L. V. ^{[1
]}

Sreseli, O. M. ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

SEMICONDUCTORS | 2010年 / 44卷 / 12期

基金：

俄罗斯基础研究基金会;

关键词：

SEPARATION;

D O I：

10.1134/S1063782610120092

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Free-standing layers of porous silicon with a thickness ranging from 50 to 200 mu m have been fabricated using an electrolyte composed of HF and acetic acid. Chemical aspects of the etching process associated with the evolution of gases that favor detachment of layers from substrates are considered. The layers exhibit stable photoluminescence in the visible spectral region observed from both of their sides.

引用

页码：1588 / 1591

页数：4

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