High-performance VCO for 5-GHz WLANs in 0.35 μm CMOS standard technology

被引：0
作者：
Zito, D. [1 ]
Pepe, D. [1 ]
Neri, B. [1 ]
机构：
[1] Univ Pisa, Dept Informat Engn DIIEIT, Radio Frequency & Microwave Integrated Circuits L, Pisa, Italy
来源：
2006 13TH IEEE INTERNATIONAL CONFERENCE ON ELECTRONICS, CIRCUITS AND SYSTEMS, VOLS 1-3 | 2006年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A completely integrated VCO for IEEE 802.11a and HiPerLAN/2 WLAN applications has been designed in a 0.35 mu m CMOS standard technology. High-Q (40 at 5.2 GRz) equivalent inductors of the LC tanks have been implemented by means of a new topology of the active circuit 'Boot-Strapped Inductor' (BSI). The VCO consumes 9 mW and produces a local oscillation signal with the tuning range from 4.91 to 5.93 GRz. The Phase Noise is -129 Me at 1 NMz of frequency offset from the central frequency (5.4 GHz), which represents the best result in literature for integrated VCOs. The VCO achieves a FOM of -189.5 dBc/Hz at 100 KRz and -194.1 dBc/Hz at 1 MHz. These results are superior to those obtained in previous works which employ active inductors, and very close to those obtained by using passive inductors realized with additional fabrication steps in more expensive technologies.
引用
收藏
页码：188 / 191
页数：4
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