Pressure-induced structural and electronic transitions in bismuth iodide

被引:21
|
作者
Wang, Xiaomeng
Wu, Juefei
Wang, Jinghui
Chen, Tong
Gao, Hao
Lu, Pengchao
Chen, Qun
Ding, Chi
Wen, Jinsheng
Sun, Jian [1 ]
机构
[1] Nanjing Univ, Sch Phys, Natl Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China
基金
中国国家自然科学基金;
关键词
DIMENSIONAL TOPOLOGICAL INSULATOR; INDUCED SUPERCONDUCTIVITY;
D O I
10.1103/PhysRevB.98.174112
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Using a machine-learning accelerated crystal structural search, and ab initio calculations together with high-pressure Raman measurements, we study the crystal and electronic structures of bismuth iodide (BiI) systematically up to 50 GPa. We find that the ambient C2/m phase (beta-Bi4I4) transforms across a tetragonal P4(2)/mmc phase at 8.5 GPa and finally to a hexagonal P6(3)/mmc phase at 28.2 GPa. Our high-pressure Raman experiments identify a phase transition at around 8.6 GPa, and the experimental Raman modes evolution agrees with our calculations reasonably. Band-structures calculations suggest the BiI system undergoes a pressure-induced topological phase transition from a topological metal (P4(2)/mmc phase) to a trivial metal (the P6(3)/mmc phase). Our electron-phonon coupling calculations show both the P4(2)/mmc and P6(3)/mmc phases are superconductors and the estimated superconducting critical temperature agrees with previous measurements. Our study shows the previously reported pressure-induced superconductivity in BiI should originate from structure phase transitions.
引用
收藏
页数:9
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