An Improved RF MOSFET Model Accounting Substrate Coupling Among Terminals

被引：10

作者：

Wu, Yunqiu ^{[1
]}

Xu, Qinghe ^{[1
]}

Zhao, Chenxi ^{[1
]}

Liu, Jun ^{[2
]}

Yu, Yiming ^{[1
]}

Yin, Wenyan ^{[3
]}

Kang, Kai ^{[1
]}

机构：

[1] Univ Elect Sci & Technol China, Sch Elect Engn, Chengdu 611731, Sichuan, Peoples R China

[2] Hangzhou Dianzi Univ, Minist Educ, Key Lab RF Circuits & Syst, Hangzhou 310037, Zhejiang, Peoples R China

[3] Zhejiang Univ, Coll Informat Sci & Elect Engn, Hangzhou 310058, Zhejiang, Peoples R China

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2018年 / 28卷 / 02期

基金：

中国博士后科学基金; 中国国家自然科学基金;

关键词：

CMOS transistor; nonlinear phase; substrate network coupling; CMOS;

D O I：

10.1109/LMWC.2017.2780766

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An RF CMOS model incorporating an improved substrate coupling network is developed. The proposed model focuses on characterizing the nonlinear phase of S12 when a transistor is under zero-bias condition. In addition, a corresponding parameter extraction technique of the model is proposed. To validate this model, a set of transistors fabricated in a commercial 90-nm CMOS process is investigated under multibias conditions. Comparison between measurement and calculation results shows that good agreement has been achieved, which indicates that the proposed model can accurately characterize the performance of transistors up to 66 GHz.

引用

页码：138 / 140

页数：3

共 50 条

[1] An improved model for substrate in RF SOI MOSFET varactor
Li, Wenjun
Chen, Xiaochuan
Liu, Jun
INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS, 2017, 30 (02)
[2] An improved deep submicrometer MOSFET RF nonlinear model with new breakdown current model and drain-to-substrate nonlinear coupling
Heo, D
Gebara, E
Chen, UJE
Yoo, SY
Hamai, M
Suh, Y
Laskar, J
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2000, 48 (12) : 2361 - 2369
[3] Improved deep sub-micron MOSFET RF nonlinear model with new breakdown current model and drain to substrate nonlinear coupling
Heo, D.
Gebara, E.
Chen, E.
Yoo, S.
Hamai, M.
Laskar, J.
2000, IEEE, Piscataway, NJ, United States (02):
[4] An improved deep sub-micron MOSFET RF nonlinear model with new breakdown current model and drain to substrate nonlinear coupling
Heo, D
Gebara, E
Chen, E
Yoo, S
Hamai, M
Laskar, J
2000 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3, 2000, : 745 - 748
[5] A RF MOSFET SPICE model with a new substrate network
Lee, S
Kim, CS
Yu, HK
RAWCON2000: 2000 IEEE RADIO AND WIRELESS CONFERENCE, PROCEEDINGS, 2000, : 203 - 206
[6] rf MOSFET modeling accounting for distributed substrate and channel resistances with emphasis on the BSIM3v3 SPICE model
Liu, W
Gharpurey, R
Chang, MC
Erdogan, U
Aggarwal, R
Mattia, JP
INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST, 1997, : 309 - 312
[7] Model of Substrate Capacitance of MOSFET RF Switch Inspired by Inverted Microstrip Line
Solomko, Valentyn
Oezdamar, Oguzhan
Weigel, Robert
Hagelauer, Amelie
IEEE 51ST EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC 2021), 2021, : 207 - 210
[8] An improved substrate-loss model to determine MOSFET drain, source and substrate elements
Torres-Torres, R
Murphy-Arteaga, R
Torres-Jacome, A
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2004, 43 (02) : 126 - 130
[9] An Improved RF MOSFET Model Including Scalable Gate Resistance and External Inductances
Cha, Jiyong
Cha, Jun-Young
Jung, Dae-Hyoun
Lee, Seonghearn
ISOCC: 2008 INTERNATIONAL SOC DESIGN CONFERENCE, VOLS 1-3, 2008, : 431 - 432
[10] Improved Elastic Contact Model Accounting for Asperity and Bulk Substrate Deformation
Chang-Dong Yeo
Raja R. Katta
Andreas A. Polycarpou
Tribology Letters, 2009, 35 : 191 - 203

← 1 2 3 4 5 →