Breakdown-induced thermochemical reactions in HfO2 high-κ/polycrystalline silicon gate stacks -: art. no. 242907

被引：8
作者：
Ranjan, R
Pey, KL [1 ]
Tung, CH
Tang, LJ
Ang, DS
Groeseneken, G
De Gendt, S
Bera, LK
机构：
[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Ctr Microelect, Singapore 639798, Singapore
[2] Inst Microelect, Singapore 117685, Singapore
[3] IMEC, B-3001 Louvain, Belgium
来源：
APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 24期
关键词：
D O I：
10.1063/1.2146071
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The chemistry of dielectric-breakdown-induced microstructural changes in HfO2 high-kappa/polycrystalline silicon gate nMOSFETs under constant voltage stress has been studied. Based on an electron energy loss spectrometry analysis, the hafnium and oxygen chemical bonding in the breakdown induced Hf-based compounds of a "ball-shaped" defect is found to be different compared to the stoichiometric HfO2 and SiO2. The formation of possibly HfSixOy and HfSix compounds in the "ball-shaped" defect is attributed to a thermochemical reaction triggered by the gate dielectric breakdown.
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页码：1 / 3
页数：3
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