Investigation of type inversion of n-bulk in 10 MeV proton-irradiated FZ silicon detectors using a scanning electron microscope

被引：3
作者：
Leinonen, K
Palviainen, T
Tuuva, T
Tuovinen, E
Härkönen, J
Luukka, P
机构：
[1] Lappeenranta Univ Technol, FIN-53851 Lappeenranta, Finland
[2] Univ Helsinki, Helsinki Inst Phys, FIN-00014 Helsinki, Finland
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2005年 / 552卷 / 03期
关键词：
radiation detector; silicon; radiation tolerance; type inversion; voltage; electric field;
D O I：
10.1016/j.nima.2005.07.005
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Based on the results of capacitance-voltage measurements and transient current technique, it was earlier deduced that the n-type bulk of float zone silicon radiation detectors changes type in heavy irradiation. This paper describes the results of measuring the voltages and electric fields with a scanning electron microscope using the voltage-contrast effect, inside radiation detectors that were irradiated with 10 MeV protons with several fluences. The results confirm the earlier observations and give more accuracy to the electric field measurements. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：357 / 363
页数：7
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