Interface light absorption in nanostructures

被引：0

作者：

Braginsky, L ^{[1
]}

Shklover, V ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Semicond Phys, Novosibirsk 630090, Russia

来源：

PROCEEDINGS OF THE FIFTH INTERNATIONAL SYMPOSIUM ON QUANTUM CONFINEMENT: NANOSTRUCTURES | 1999年 / 98卷 / 19期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Light absorption at the semiconductor boundary is analized. It is found that the posibilty of the electron momentum nonconservation at the interface can lead to essential enhancement of absorption. Influence of the interface roughness is considered. The size dependence of the absorption is estimated.

引用

页码：489 / 503

页数：15